The Single-Electron Transistor

The diagram reflects an interesting feature it is periodic with respect to the voltage Ug with a period of e/ Cq. This results from the fact that every new portion of the gate 

The dependence of the transistor current on the gate voltage opens up the opportunity to fabricate a sensitive device which measures either directly an electric charge on the island or the charge induced on the island by the charges collected to the gate, that is, a highly sensitive electrometer. The sensitivity of such an electrometer, which has already been achieved in practice, is of the order of to 10 parts 

---

Devoret, M. H. Schoelkopf, R. J. 2000. Amplifying quantum signals with the single-electron transistor. Nature 406 1039-1046. 

Figure 2.15 Schematic depiction of electrostatic energy / c, occupation number N and conductance G of the single-electron transistor shown in Figure 2.14, as a function of the gate charge Qc- The occupation of the single-electron transistor changes when the...

The source and drain tunnel resistances and capacitances are assumed equal, the charging energy is 100 k T. For gate charge Qc = 0, the single-electron transistor is in the Coulomb blockade regime, and the l-Vcurve exhibits the... 

Kastner, M.A., The single electron transistor and artificial atoms, Ann. Phys. (Leipzig), 9(11-12), 2000, 885-894. 

An additional and very attractive aspect of molecular qubits is the fact that they are stable in solution, and that the ligand shell can be functionalized with specific chemical groups. In recent years, this has enabled depositing molecular clusters onto different substrates and grafting them to nanostructures or devices, such as carbon nanotube single electron transistors or point contacts [112]. These devices... 

Using an EMBJ between two Au electrodes, the organometallic equivalent of a no-gain single-electron transistor (SET) was realized at 0.1 K with an... 

Figure 1. A nanomechanical resonator the thin central bar is coated with a conductor (gold) which also forms the T-shaped control electrode to the left. The thin line parallel to the resonator is the central island of a single-electron transistor which serves as the position sensor. 

Fig. 9. (a) Top view of a Coulomb blockade device (single-electron transistor) patterned on an AlGaAs—GaAs heterojunction, where 6S= the surface gate ... 

SSET Superconducting Single-electron transistor. The same as SET, but the bulk of the electrodes are superconducting. 

---