The Effect of Etching on Cleaning

FIGURE 16.34 Oxide etching as a function of temperature at a megasonics power level of 2 using SCI for 8, 12, 16, and 20 min using a STEAG bench. 

It is important to understand the adhesion force of particles on polished surfaces, which can be correlated with the polishing and cleaning characteristics of a CMP process. Higher adhesion force often leads to higher polishing rate, higher level of scratches, and greater number of particles left on the polished surface. 

HYU acknowledges the financial support from the Ministry of Education and Human Resources Development (MOE), the Ministry of Commerce, Industry and Energy (MOCIE), and Ministry of Labor (MOLAB) through the fostering project of the Lab of Excellence, post BK21 program, and Samsung Electronics Co., Ltd., Korea. 

List the key attributes for a post-CMP cleaning solution in order to remove the silica slurry residue from silicon, silicon dioxide, silicon nitride, copper, or tungsten surfaces. 

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