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Text mask

The name of the information mask used for data input is indicated in the Text Definition field. If you prefer to use another information mask click on Load Text Mask, the relevant dialog box depicted in Fig. 7.4 will appear and from this you can select a different information mask. Enter the information you want to attach to the sample file. You do not need to fill out every field. After inserting the appropriate data use the Add Information button to save it. As a result, a new data block imto will be attached to the OPUS file. Now right-click on the data block icon in the Browser and select Show Report this will open a report window that displays the information you just entered. [Pg.62]

Figure 7.4. The Load Info Text Mask dialog box. Figure 7.4. The Load Info Text Mask dialog box.
Figure C2.18.1. Schematic representation of various resuits of etching tiirough a mask. The regions marked by ietters are defined and described in tire text. Figure C2.18.1. Schematic representation of various resuits of etching tiirough a mask. The regions marked by ietters are defined and described in tire text.
Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final... Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...
Full-color printing requires pages be reprinted three or four times in registration. Receptors pass over the printhead several times at exactiy the same speed and location, but contact a differentiy colored section of donor. A fourth pure black color can improve dark picture regions, sharpen text and line art, and mask color misregistration. [Pg.51]

Figure 15. Statistical analysis of the sharp jumps detected in the S profiles of the 22 human autosomal chromosomes by the WT microscope at scale a = 200 kbp for repeat-masked sequences [38, 39]. AS = S(3 ) — S(5 ), where the averages were computed over the two adjacent 20-kbp windows, respectively, in the 3 and 5 direction from the detected jump location, (a) Histograms Af( AS ) of AS values, (b) A( AS > AS ) versus AS. In (a) and (b), the black (respectively, grey) line corresponds to downward AS < 0 (respectively, upward AS > 0) jumps. R = 3 corresponds to the ratio of upward over downward jumps presenting an amphmde AS > 12.5% (see text). Figure 15. Statistical analysis of the sharp jumps detected in the S profiles of the 22 human autosomal chromosomes by the WT microscope at scale a = 200 kbp for repeat-masked sequences [38, 39]. AS = S(3 ) — S(5 ), where the averages were computed over the two adjacent 20-kbp windows, respectively, in the 3 and 5 direction from the detected jump location, (a) Histograms Af( AS ) of AS values, (b) A( AS > AS ) versus AS. In (a) and (b), the black (respectively, grey) line corresponds to downward AS < 0 (respectively, upward AS > 0) jumps. R = 3 corresponds to the ratio of upward over downward jumps presenting an amphmde AS > 12.5% (see text).
Figure 3.27. Dynamic range and the detection of small signals in the presence of large ones. As the digitiser resolution and hence its dynamic range are reduced, the carbon-13 satellites of the parent proton resonance become masked by noise until they are barely discernible with only 6-bit resolution (all other acquisition parameters were identical for each spectrum). The increased noise is digitisation or quantisation noise (see text below). Figure 3.27. Dynamic range and the detection of small signals in the presence of large ones. As the digitiser resolution and hence its dynamic range are reduced, the carbon-13 satellites of the parent proton resonance become masked by noise until they are barely discernible with only 6-bit resolution (all other acquisition parameters were identical for each spectrum). The increased noise is digitisation or quantisation noise (see text below).
Figure 1.6. Schematic representation of spacially addressable parallel synthesis on functionalized silica wafer as described in the text (A) and the masking scheme towards combinatorial libraries of a trimer using the generic building blocks A. B. and C (B). Figure 1.6. Schematic representation of spacially addressable parallel synthesis on functionalized silica wafer as described in the text (A) and the masking scheme towards combinatorial libraries of a trimer using the generic building blocks A. B. and C (B).
The appendices provide some additional material which can provide a starting point for further research into OFETs. While some individual papers are referenced in the text, many review articles provide greater detail and more references for specific topics several review papers are listed in Appendix A. Appendix B provides detailed recipes for a transistor fabrication process flow. Mask layout and design is discussed in Appendix C. [Pg.5]

Spectral data banks contain all sorts of information about a particular substance in the form of tables. The requested field of a table can be accessed by the user either via abbreviations (e.g., MF for molecular formula) or via input masks, which place the necessary denominations of the field at the user s disposal. Some fields may contain searchable information only as alphanumerical text (e.g., compound names), others may be searched only numerically (e.g., molecular weight). In the case of numerical fields, some numerical operators (e.g., < = > or-for area allocation) may also be applied. [Pg.1039]

Cuient Info Mask C kOPUSOEMOVMETHODS DEFAULT.TXD Load Text Definition Restore Original ClearAI... [Pg.65]

The Contents of Info Set(s) page displays the info text definition of the selected library. Figure 11.35 depicts the info set used for the IR library. If you selected Change Info Definition on the Edit Library page, a new info mask... [Pg.155]

Ball helpfully distinguishes between policy as text and policy as discourse. As was seen above, the texts themselves are full of contradictions and contestations. As discourses, policies create effects through the way they speak of objects and of people. It is the discursive aspect of policy that is the most significant because it works on people in their local situations and masks its own effects ... [Pg.26]

Fig. 7 a and b. Portable Conformable mask. A substrate with step is covered (planarized) with a deep LTV-sensitive resist (e.g. PMMA) and a top layer which consists of a normal positive photoresist. After imagewise irradiation through a mask (a), the top layer is developed (b) and blanket exposed to deep UV. This results in a sharp image (see text)... [Pg.97]


See other pages where Text mask is mentioned: [Pg.63]    [Pg.63]    [Pg.134]    [Pg.45]    [Pg.170]    [Pg.458]    [Pg.58]    [Pg.13]    [Pg.354]    [Pg.752]    [Pg.541]    [Pg.45]    [Pg.106]    [Pg.205]    [Pg.111]    [Pg.112]    [Pg.124]    [Pg.36]    [Pg.1172]    [Pg.904]    [Pg.205]    [Pg.860]    [Pg.36]    [Pg.46]    [Pg.47]    [Pg.537]    [Pg.225]    [Pg.440]    [Pg.140]    [Pg.20]    [Pg.130]    [Pg.207]    [Pg.289]    [Pg.76]   
See also in sourсe #XX -- [ Pg.62 ]




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