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Technology Barriers and Suggestions for Future Work

A recent result on Al-implanted 4H-SiC, which is in sharp contrast to the common opinion that amorphization should be avoided, has been reported by E. Kalinina from the Ioffe Institute in St. Petersburg [124]. She showed that very good activation could be achieved by RT implantation of Al at doses in excess of 10 cm . This completely amorphized material is shown to be fairly well recrystallized by an RTA process that also causes some of the Al to diffuse into the low-doped n-type epilayer, forming the p n junction at a larger depth than the highly defective implanted area. Nearly ideal forward IV-characteristics were also shown for current densities of several kA cm . Even if the stability of such heavily implanted devices may be questioned this result shows that there is still a long way to go before a fully optimized implantation technology is at hand. [Pg.147]

Ion implantation appears as the only feasible method to accomplish selective area doping of SiC in planar device technology. As described in this chapter, substantial progress has been made during recent years but several fundamental issues and technology barriers remain before the implantation process is fully developed and can be truly implemented in SiC device processing. Eor instance, mesa-etched p n-diodes [Pg.147]


In this chapter, we review the current status of doping of SiC by ion implantation. Section 4.2 examines as-implanted depth profiles with respect to the influence of channeling, ion mass, ion energy, implantation temperature, fluence, flux, and SiC-polytype. Experiments and simulations are compared and the validity of different simulation codes is discussed. Section 4.3 deals with postimplant annealing and reviews different annealing concepts. The influence of diffusion (equilibrium and nonequilibrium) on dopant profiles is discussed, as well as a comprehensive review of defect evolution and electrical activation. Section 4.4 offers conclusions and discusses technology barriers and suggestions for future work. [Pg.114]


See other pages where Technology Barriers and Suggestions for Future Work is mentioned: [Pg.147]    [Pg.147]    [Pg.149]    [Pg.151]    [Pg.153]    [Pg.147]    [Pg.147]    [Pg.149]    [Pg.151]    [Pg.153]    [Pg.261]    [Pg.186]   


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