Laser surface emitting

VCSEL. See Vertical cavity surface-emitting lasers. 

Fig. 10. Cross-sectional drawing of a vertical cavity surface emitting laser (VCSEL). Proton implantation is used to channel the current through a small active region. Light is emitted in the direction perpendicular to the plane of the wafer. This makes preparation of two-dimensional arrays quite easy.

Fig. 12. Schematic of surface-emitting laser diodes where U represents the active region (a) planar cavity surface-emitting laser diode (PCSEL) with 45° etched reflectors and (b) vertical cavity surface-emitting laser diode (VCSEL) with semiconductor-based multilayer mirror stacks grown into the stmcture.

The flexibility of the substrate, the ease, and the low costs of fabrication of this DFB-polynter laser offer a very promising way to novel surface-emitting laser devices which take full advantage of the properties of conjugated polymers. 

More specifically, the unique modal field profile and characteristics of the CBNL structure are advantageous for biochemical sensing applications, but also for surface emitting lasers and for studies involving strong atom-field interactions such as nonlinear optics and cavity QED. 

To demonstrate the unique advantages of the CBNL structure, we focus on two applications surface emitting lasers (SEL) and biochemical sensing. 

See also Planar cavity surface-emitting laser (PCSEL) diodes Vertical cavity surface-emitting laser (VCSEL) diodes compound semiconductor-based, 22 179 Laser Doppler velocimetry (LDV), 11 784 Laser Doppler velocimeters, 11 675 Laser-drilled surgical needles, 24 206 Laser dye energy levels, 14 702-703 Laser fabrication techniques, titanium, 24 857... 

PLA/MMT nanocomposites, 20 311 Planar cameras, 21 277 Planar cavity surface-emitting laser (PCSEL) diodes, 22 178 Planar diodes, 19 163 Planarization, dielectrics for, 22 192 Planck s blackbody radiation law, 14 662, 663 24 452... 

C5.5 InGaN/GaN laser diodes grown on 6H-SiC C5.6 Technologies for GaN surface emitting lasers C5.7 Role of defects in GaN-based lasers C5.8 GaN-based UV detectors... 

FIGURE 2 A model of surface emitting lasers considered in this study. 

C5.6 Technologies for GaN surface emitting lasers D THRESHOLD CRITERIA... 

In conclusion, the optical gain of quantum well GaN/AlGaN was estimated, based on the density-matrix theory. The introduction of GaN quantum wells as active regions in GaN-based surface emitting lasers can reduce the threshold current to lower than that of bulk GaN layers. Sub-milliampere operation can be expected by reducing the device diameter. Fabrication processes such as highly reflective mirrors and dry-etch techniques have been demonstrated. 

VCSEL vertical cavity surface emitting laser... 

In a somewhat similar fashion, Ishii et alP- have demonstrated inkjet fabrication of polymeric microlenses for optical chip packaging. UV curable epoxy resin is deposited onto optical devices by inkjet printing. When the droplets hit the surface, they form into partial spheres due to their surface tension, and are UV-cured to form the microlens with diameters from 20 to 40 tm with /-numbers of 1.0 to 11.0. Their uniformity in a microlens array was measured to be within 1% in diameter and 3 tm in pitch (total count of 36 lenses). They have also demonstrated hybrid integration of inkjetted microlenses with a wire-bonded vertical-cavity-surface-emitting laser (VCSEL) with coupling efficiencies of 4 dB higher than without the microlens. 

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