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Substrate bias voltage

Figure 5. Diamond particle density as a function of substrate bias voltage. During bias pretreatment, the gas pressure was 0.2,2, and 15 torr, and CH4 was (b.12 vol.% (b) 10 vol.% and (c) 40 vol.%.1 (Reproduced with permission.)... Figure 5. Diamond particle density as a function of substrate bias voltage. During bias pretreatment, the gas pressure was 0.2,2, and 15 torr, and CH4 was (b.12 vol.% (b) 10 vol.% and (c) 40 vol.%.1 (Reproduced with permission.)...
Figure 7. cBN content together with the deposition rate of BN films deposited at different substrate bias voltages by d.c. magnetron sputtering of a boron target. [Pg.432]

Figure 12. Radial distribution of the charge carrier density 10 mm from the substrate surface (hBN target, RF target power 1000W, substrate bias voltage = —150 V, p = 0.2 Pa, 97% Ar, 3% N2). Figure 12. Radial distribution of the charge carrier density 10 mm from the substrate surface (hBN target, RF target power 1000W, substrate bias voltage = —150 V, p = 0.2 Pa, 97% Ar, 3% N2).
Figure 13. Total incorporated momentum per deposited atom in dependence on the substrate bias voltage during step 4. In addition the value for optimum cBN nucleation = —150 V 97% Ar/ 3% N2) is shown. Figure 13. Total incorporated momentum per deposited atom in dependence on the substrate bias voltage during step 4. In addition the value for optimum cBN nucleation = —150 V 97% Ar/ 3% N2) is shown.
Itoh et al. (1983) report that the perpendicular magnetic anisotropy in Gd-Fe films, when prepared by means of sputtering under low substrate bias voltage, is mainly stress determined. In alloys where the R component is a non-S state ion the... [Pg.341]

Experimentally extracting redox state information from STS has been also pursued. Snyder and White measured STS of Fe-protoporphyrin IX multilayer films adsorbed on graphite electrode in air [82]. They observed an enhancement that was identical for both signs of the tip-substrate bias voltage. The data were interpreted in terms of tunneling via the adsorbate metal centers. [Pg.763]

J.HouSka,J.VI ek, S.Potocky and V.Pefina Influence of substrate bias voltage on strueture and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Diamond Relaf Matter. 16, (2007), 29-36. [Pg.64]

Flores, M., Huerta, L., EscamiUa, R. et al. 2007. Effect of substrate bias voltage on corrosion of TUSl/Ti multilayers deposited by magnetron sputtering. Applied Surface Science 253 7192-7196. [Pg.183]

Figure 6 Variation of micro Vickers hardness with substrate bias voltage for a TiC film deposited by the HCD process. Inconel 625 substrate substrate temperature 500°C 10 xm thick 25-g load. Figure 6 Variation of micro Vickers hardness with substrate bias voltage for a TiC film deposited by the HCD process. Inconel 625 substrate substrate temperature 500°C 10 xm thick 25-g load.

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