Nitrides Subject

There is also a possibility of preparing mixed III-V nitride alloys, e.g. GaAs connecting tire two sets of semiconductor materials. Their gap dependence on composition is tire subject of active research. 

By subjecting boron nitride (a white powder) to high pressure and temperature small crystals of a substance harder than diamond, known as borazon, are obtained. This pressure-temperature treatment changes the structure from the original graphite-like layer structure (p. 163) to a diamond-like structure this hard form can withstand temperatures up to 2000 K. 

The sulfur nitrides have been the subject of several reviews (206—208). Although no commercial appHcations have as yet been developed for these compounds, some interest was stimulated by the discovery that polythiazyl, a polymeric sulfur nitride, (SN), with metallic luster, is electroconductive (see Inorganic highpolymers) (208,209). Other sulfur nitrides are unstable. Tetrasulfur nitride is explosive and shock-sensitive. 

In the past, there was quite a lot of confusion regarding the true nature of some alkaline-earth compounds. Several boride, nitride, and carbide compounds, as well as some mixed species, especially of calcium, were in doubt or at least subject to some ongoing discussion. For example, the phase relationships and structures of CaC2 phases I-IV were not well understood. The three nitride... 

Research on plasma-deposited a-C(N) H films has been frequently included in the general discussion of carbon nitride solids [2, 3]. However, the presence of hydrogen in its composition, and the complexity of the deposition process, which introduces the nitrogen species in the already intricate hydrocarbon plasma-deposition mechanism, make a-C(N) H films deserve special consideration. This is the aim of the present work to review and to discuss the main results on the growth, structure, and properties of plasma-deposited a-C(N) H films. As this subject is closely related to a-C H films, a summary of the main aspects relative to the plasma deposition of a-C H films, their structure, and the relationship between the main process parameters governing film structure and properties is presented... 

In the last decade, numerous compounds of these types have been the subject of detailed CVD studies, demonstrating their potential for the deposition of the corresponding binary materials. Most of the work has concentrated on binary nitrides and phosphides, while the deposition of binary MSb films has been studied to a far lesser extent. The lack of potential precursors has been the major problem for the deposition of group 13-antimonide films for many years. Only a very few group 13-Sb compounds have been known until we and Wells established general synthetic pathways as was shown in Sections 2 and 3. Consequently, detailed investigations concerning their potential to serve for the deposition of the desired materials... 

Zirconium nitride, Zr3N4. is made by ammoniating the tetrachloride to yield Zr(NlU)4Cl, which yields the nitride on heating. The nitride, like the bonde and carbide, are alloy-like in character, with high fusing points, extreme hardness, and subject to considerable variation in composition. Thus Zr3N4 may vary in composition to ZrN without material change in its properties. 

The field of transition metal carbides and nitrides is growing rapidly, as additional uses for these interesting materials emerge. Interest in the subject is evidenced by a recent workshop proceedings, a monograph on theory, and several reviews and encyclopedia articles. However, there has been no comprehensive coverage of the topic since the 1970s. 

The rapid development of solid state physics and technology during the last fifteen years has resulted in intensive studies of the application of plasma to thin film preparation and crystal growth The subjects included the use of the well known sputtering technique, chemical vapour deposition ( CVD ) of the solid in the plasma, as well as the direct oxidation and nitridation of solid surfaces by the plasma. The latter process, called plasma anodization 10, has found application in the preparation of thin oxide films of metals and semiconductors. One interesting use of this technique is the fabrication of complementary MOS devices11. Thin films of oxides, nitrides and organic polymers can also be prepared by plasma CVD. 

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