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Strain-induced photoluminescence red shift of InGaAs GaAs microtubes

STRAIN-INDUCED PHOTOLUMINESCENCE RED SHIFT OF InGaAs /GaAs MICROTUBES [Pg.51]

VOROB EV, V. Ya. PRINZ, A. I. TOROPOV Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences Lavrent evAve. 13, 630090Novosibirsk, Russia E-mail prinz isp. nsc. ru [Pg.51]

Institute of Molecular and Atomic Physics, National Academy of Science of Belarus [Pg.51]

Skaryna Ave. 70, 220072 Minsk, Belarus E-mail gaponen imaph.bas-net.by [Pg.51]

Laboratory for Micro- and Nanostructures, Paul Scherrer Institute 5232 Villigen, Switzerland E-mail detlev.gruetzmacher psi.ch [Pg.51]

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InGaAs

Induced shifts

Induced strain

MicroTubes

Microtube

Of GaAs

Photoluminescence

Photoluminescent

Red shift