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Stability islands

The main factors affecting the stability island of an electrospray system is the fluid properties themselves in particular the surface tension and conductivity. The fluid surface tension directly affects the ability of a fluid to atomize an electrospray because it opposes the force applied by the ions at the fluid/air interface. Therefore, increasing the surface tension will increase the required field strength to establish a cone-jet mode. The conductivity of the fluid used has the effect of shifting the electrospray stability island to a narrower range and also to lower flow rates. This is shown in Fig. 32.12. [Pg.739]

Fig. 32.12 Electrospray stability island, effect of varying conductivity (Reprinted with permission [11])... Fig. 32.12 Electrospray stability island, effect of varying conductivity (Reprinted with permission [11])...
Fig. 7. Allegorical representation of island of stability (magic island) (28). Fig. 7. Allegorical representation of island of stability (magic island) (28).
The effects of a rather distinct deformed shell at = 152 were clearly seen as early as 1954 in the alpha-decay energies of isotopes of californium, einsteinium, and fermium. In fact, a number of authors have suggested that the entire transuranium region is stabilized by shell effects with an influence that increases markedly with atomic number. Thus the effects of shell substmcture lead to an increase in spontaneous fission half-Hves of up to about 15 orders of magnitude for the heavy transuranium elements, the heaviest of which would otherwise have half-Hves of the order of those for a compound nucleus (lO " s or less) and not of milliseconds or longer, as found experimentally. This gives hope for the synthesis and identification of several elements beyond the present heaviest (element 109) and suggest that the peninsula of nuclei with measurable half-Hves may extend up to the island of stabiHty at Z = 114 andA = 184. [Pg.227]

Since the radioactive half-lives of the known transuranium elements and their resistance to spontaneous fission decrease with increase in atomic number, the outlook for the synthesis of further elements might appear increasingly bleak. However, theoretical calculations of nuclear stabilities, based on the concept of closed nucleon shells (p. 13) suggest the existence of an island of stability around Z= 114 and N= 184. Attention has therefore been directed towards the synthesis of element 114 (a congenor of Pb in Group 14 and adjacent superheavy elements, by bombardment of heavy nuclides with a wide range of heavy ions, but so far without success. [Pg.1253]

A similar route has been followed most recently by Weiss et al. who have fabricated a multi-island SE device from self-assembled ID gold nanocrystal chains [28]. They assembled thiol-stabilized 50 nm Au particles in a chainlike structure and used subsequently electron-beam lithography for electrode fabrication. Here it has to be... [Pg.114]

Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)... Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)...

See other pages where Stability islands is mentioned: [Pg.87]    [Pg.307]    [Pg.739]    [Pg.954]    [Pg.879]    [Pg.87]    [Pg.307]    [Pg.739]    [Pg.954]    [Pg.879]    [Pg.224]    [Pg.226]    [Pg.322]    [Pg.129]    [Pg.171]    [Pg.14]    [Pg.30]    [Pg.1284]    [Pg.45]    [Pg.120]    [Pg.179]    [Pg.223]    [Pg.90]    [Pg.218]    [Pg.76]    [Pg.96]    [Pg.262]    [Pg.272]    [Pg.115]    [Pg.119]    [Pg.84]    [Pg.85]    [Pg.483]    [Pg.493]    [Pg.544]    [Pg.203]    [Pg.106]    [Pg.156]    [Pg.167]    [Pg.169]    [Pg.245]    [Pg.223]    [Pg.29]    [Pg.170]    [Pg.144]    [Pg.140]    [Pg.1256]    [Pg.129]   
See also in sourсe #XX -- [ Pg.293 ]




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Eka-lead (element 114) - an island of stability

Island of stability

Islands of nuclear stability

Nuclear stability islands

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