Sputter procedures

The SIMS system is mounted on a UHV spectrometer which also has XPS, UPS, LEED and thermal desorption capabilities ( ). Heating is achieved by electron bombardment from a filament mounted on the manipulator behind the sample. Cooling is achieved by circulating liquid N2 or He. Temperatures of 25K can be reached. The samples used, Ni(lOO), Cu(17%) Ni(83%) (100) and (111) and Ag(lll) were oriented within 1 and cleaned in situ by standard heating and Ar ion sputtering procedures. 

Up to 48 ternary catalyst mixtures were prepared simultaneously in less than 1 h. Hence the sputtering procedure is much faster than the wet chemical route and in fact one of the fastest syntheses available. This advantage is gained at the expense of low layer porosity. Thus, sputtered catalysts are new artificial catalysts and not directly comparable to catalysts prepared by wet-chemical procedures. These catalysts offer the advantage of quick preparation and characterization compared with alumina-based catalysts. They can also be used for obtaining so-called intrinsic kinetics because there is no influence of diffusion. 

Yoon et al. used Palladium (Pd) to modify Nafion membranes by coating them with a different thickness of Pd film, using as puttering method (Yoon et al. 2002). The scanning electron microscopy (SEM) micrographs showed that the 10 and 30 nm Pd films were dense and appeared to be well attached to the membrane. However, some cracks were found on the surface of the 100 nm Pd film. It was believed that the cracks were caused by the difference between the Nafion membrane and the Pd film in the expansion that took place when the composite membrane was immersed in water. The Nafion membrane swells more than the Pd film, which eventually develops cracks in the Pd film. Therefore, the sputtering procedures for a membrane thicker than 100 nm apparently need to be improved. From this research, a trade-off between proton conductivity and methanol crossover was noted similar to the results... 

Zhang et al. [15] have described carbon fibre microelectrodes with an integrated silver/silver chloride reference electrode for voltammetric measurement. The carbon fibre microelectrodes are sealed into a glass capillary. This capillary is coated with a thin silver film by sputtering procedure. The top layer is then converted into AgCl electrochemically (cf. Fig. 11.2). 

Figure 10.21 Schematic showing the schematic of sputtering procedure 10.8.1.2 Sputtering...

The absolute sensitivity factors Sx must be determined for this procedure by integrating intensities over time while sputtering suitable pure element samples and determining the crater volume for HF-plasma SNMS the weight loss can also be measured. 

XPS can be used to determine the composition of a solid as a function of distance away from the surface and into the bulk of the solid. Such a depth profile can be constructed in two ways. One way in which a depth profile can be constructed is by using a beam of inert gas ions to sputter away material from the surface of the sample and to then record the XPS spectrum. If this procedure is repeated several times, a profile showing the composition of the material as a function of sputtering time and thus of depth into the sample can be constructed. Another way to construct a depth profile involves tilting the sample with respect to the X-ray beam. In Fig. 17A, the take-off angle or the angle between the sample surface and the direction of propagation of the ejected photoelectrons is 90 . In... 

In all of the studies described above, the CuaSi samples were prepared by ion bombardment at 330 K followed by cooling of the surface to 180 K before adsorbing the methyl radicals and chlorine. AES studies as well as ion scattering results in the literature [7, 15] show that this procedure produces a surface that is enriched in silicon compared with the Cu3Si bulk stoicWometry. We have found that surfaces with less Si enrichment (possibly even copper enriched relative to the bulk stoichiometry) can be prepared by ion bombardment at temperatures below 300 K. Specifically, Cu(60 eV)/Si(92 eV) Auger peak ratios of 1.2 - 1.7 compared with a ratio of 0.5 at 400 K can be obteiined by sputtering at 180 K. 

For this micro reactor version, the catalyst was coated on the AlMg3 platelet as a thin silver layer by sputtering [43,44], A further set of platelets was covered with an a-alumina layer by sol-gel technique and impregnated by a three-step procedure with silver lactate. 

To reduce the exposure to residual gas from the vacuum, our samples are sputtered/annealed in separate preparation chambers attached via valves to the SPM chambers. After the final anneal cycle of the cleaning procedure, the sample is transferred to the SPM chamber within a minute or so where the pressure is lower. 

The reasons will be clearer after Section 16.4, where AMS radiocarbon sample preparation procedures will be described. Now we would simply like to recall that in preparing graphite pellets for the sputtering source, after a physical chemical cleaning, samples to be dated are usually combusted to obtain C02, which is then converted to graphite by a further step. In this process, the main problem with small samples (a few tens of micrograms) is the possible introduction of contamination. 

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

---