Sputter damage

Fig. 9. Capacitance transient spectra for (a) sputter-etched p-type Si and (b) after hydrogenation of the sputter-damaged Si at 180°C for 20 min.

Eig. 3.54). ERISS enables static LEIS measurements (without noticeable damage), even at polymer surfaces (see below) for which the sputter rate even under LEIS conditions is very high. 

SIMS is inherently damaging to the sample since ion bombardment removes some material from the surface. However, other forms of damage may also occur. These include surface roughening, knock-on effects, preferential sputtering, decomposition, and implantation of source ions [49]. 

Diode sputtering the simplest but requires an electrically conductive target it has low energy efficiency and electron bombardment may cause significant damage of the substrate. 

Static SIMS is appropriate for obtaining information on the lateral distribution of surface chemical species. A broad, defocussed ion beam is often used in order to minimise surface damage. In dynamic SIMS sample erosion takes place quite rapidly, and depth profiles are obtained by monitoring peak intensities in the mass spectrum of sputtered ions as bombardment proceeds. 

---