Spin organic semiconductors

Figure 12.3. Benchmark of peer-reviewed academic reports of organic semiconductor device field-effect mobility versus time of report. All data points are for spin-coated organic semiconducting transistors. Solid points are derived from the benchmark study completed in 2002 by Brazis and Dyrc at Motorola (unpublished). The curve is a calculated estimation, based on these data, of what the expected mobility values will be in the future. The open points are data derived in 2005 from the public journals for verification of the 2002 prediction.6 38... 

Wagemans W, Koopmans B (2010) Spin transport and magnetoresistance in organic semiconductors. Phys Status Solidi B l-13... 

Santos TS, Lee JS, Migdal P, Lekshmi IC, Satpati B, Moodera JS (2007) Room temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier. Phys Rev Lett 98 016601... 

Barraud C, Seneor P, Mattana R, Stephane F, Bouzehouane K, Deranlot C, Graziosi P, Hueso L, Bergenti I, Dediu V, Petroff F, Fert A (2010) Unravelling the role of the interface for spin injection into organic semiconductors. Nat Phys 6 615-620... 

Shim JH, Raman KV, Park YJ, Santos TS, Miao GX, Satpati B, Moodera JS (2008) Large spin diffusion length in an amorphous organic semiconductor. Phys Rev Lett 100 226603... 

As with most organic semiconductors, semiconductor layers of 5 prepared by spin coating have significantly lower mobility, by as much as an order of magni-... 

FET mobility measurements thus constitute a sound method for investigating changes in the mobility of an organic semiconductor due to morphology variations. On the basis of the FET characteristics of MDMO-PPV films spin-cast from different solvents, we will discuss the influence of interchain polymer aggregates on the hole field-effect mobility and further consequences for the short-circuiting of solar cells. 

The organic semiconductor was again regio-regular P3HT (Aldrich), spin-coated into thin films from chloroform, on printed source-drain structures, as described above. 

In the last few years the first theoretical models describing spin injection at hybrid organic-inorganic interfaces and spin transport in organic materials were proposed. Most models take into account the polaronic nature of carriers in organic semiconductors [17, 18]. The interface role was strongly underlined by, among others. Smith and coworkers [19]. 

It was aheady mentioned that one of the major advantages for the application of organic semiconductors in spintronics applications is the large spin diffusion length even at room temperature. While most of the spintronics experiments published up to now are performed at very low temperature, it is assumed that applying organics makes this effort non-essential. For this reason SQUID measurements were also carried out at room temperature in order to check if the magnetic behaviour of the contacts still allows spinFET operation. 

CPB Materials. Various types of silane crosslinkers were employed to fabricate crosslinked polymer blend (CPB) dielectrics in this study (Fig. 4). The reactivity of each crosslinker was tested via in situ NMR kinetic studies. The CPB dielectrics were fabricated on various substrates using mixture of polymer and crosslinker solution via spin-coating and gravure-printing. Organic semiconductors and source/ drain electrodes were vacuum-deposited to complete the OFET device. Dielectric and OFET properties were measured under vacuum and ambient as described previously. 

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