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Space inversion region

V (y) is the reverse bias applied in the perpendicular direction to the field-effect induced p-n junction created by the n-type surface inversion layer and the p-type substrate. The charge 2b (y) created by the immobile ionized atoms of the dopant forms the space charge region. The depletion approximation assumes that there are no mobile charges at all in the space charge regions. Under that assumption, (C.24) applies. [Pg.362]

Fig. 3.18 Types of space-charge region in an n-type semiconductor, dependent on the potential applied relative to the flat band potential, Un,. U represents potential (V) and Ec sur the electronic energy corresponding to Ec close to the surface, (a) c,sur = E no space-charge region (b) c,sur> E (U < U ) formation of an accumulation layer (c) c,sur formation of a depletion layer (d) c,sur efb (U U ) formation of an inversion layer. Fig. 3.18 Types of space-charge region in an n-type semiconductor, dependent on the potential applied relative to the flat band potential, Un,. U represents potential (V) and Ec sur the electronic energy corresponding to Ec close to the surface, (a) c,sur = E no space-charge region (b) c,sur> E (U < U ) formation of an accumulation layer (c) c,sur<Ffb (U > formation of a depletion layer (d) c,sur efb (U U ) formation of an inversion layer.
Figure 10. Effect of fixed oxide/insulator charge on the effective junction space-charge region (a) flat-band condition (b) positive fixed charge causes inversion of the p side and formation of a n-type surface channel (c) negative fixed charge causes accumulation of the p side and a narrow field induced junction at the surface (d) larger amount of negative fixed charge causes inversion of the n side and formation of a p-type surface channel. (With permission of Academic Press.)... Figure 10. Effect of fixed oxide/insulator charge on the effective junction space-charge region (a) flat-band condition (b) positive fixed charge causes inversion of the p side and formation of a n-type surface channel (c) negative fixed charge causes accumulation of the p side and a narrow field induced junction at the surface (d) larger amount of negative fixed charge causes inversion of the n side and formation of a p-type surface channel. (With permission of Academic Press.)...
In order for Am to be a regular matrix at every point in the assumed region of configuration space it has to have an inverse and its elements have to be analytic functions in this region. In what follows, we prove that if the elements of the components of Xm are analytic functions in this region and have derivatives to any order and if the P subspace is decoupled from the corresponding Q subspace then, indeed. Am will have the above two features. [Pg.717]

The first polyatomic molecule was detected in 1968 with use of a telescope having a dish 6.3 m in diameter at Hat Creek, California, USA, designed to operate in the millimetre wave region. Emission lines were found in the 1.25 cm wavelength region due to NH3. The transitions are not rotational but are between the very closely spaced 2 = 0 and 2 = 1 levels of the inversion vibration V2 (see Section 6.2.5.4). [Pg.120]

The SSW form an ideal expansion set as their shape is determined by the crystal structure. Hence only a few are required. This expansion can be formulated in both real and reciprocal space, which should make the method applicable to non periodic systems. When formulated in real space all the matrix multiplications and inversions become 0(N). This makes the method comparably fast for cells large than the localisation length of the SSW. In addition once the expansion is made, Poisson s equation can be solved exactly, and the integrals over the intersitital region can be calculated exactly. [Pg.234]


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See also in sourсe #XX -- [ Pg.88 ]

See also in sourсe #XX -- [ Pg.97 , Pg.98 ]




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