Space charge layer thickness

The optimum conditions would arise for the size of Pt particles comparable with the thickness of the space charge layer. Such an adjustment would certainly be favored by the Pt encapsulation and by a decrease of the space charge layer thickness, around Pt particles, due to the increase of the donor concentration. 

Lanz and Com [51] proposed a 20-nm thick space charge layer on the Ti02 surface. When the fourth-order response with our TMA-covered surface is generated in the space charge layer, the broad width of the 826-cm band is understood as a depth-dependent wavenumber of the lattice vibration. 

Radius of curvature relative to the thickness of space charge layer... 

The formation of two-layer PS on p-Si involves two different physical layers in which the potential-current relations are sensitive to the radius of curvature. The space charge layer of p-Si under an anodic potential is thin, which is responsible for the formation of the micro PS. The non-linear resistive effect of the highly resistive substrate is responsible for that of macro PS. The effect of high substrate resistivity should also occur for lowly doped n-Si. However, under normal conditions, the thickness of the space charge layer under an anodic potential, at which macro PS is formed, is on the same order of magnitude as the dimension... 

The fundamental reason for the uneven distribution of reactions is that the rate of electrochemical reactions on a semiconductor is sensitive to the radius of curvature of the surface. This sensitivity can either be associated with the thickness of the space charge layer or the resistance of the substrate. Thus, when the rate of the dissolution reactions depends on the thickness of the space charge layer, formation of pores can in principle occur on a semiconductor electrode. The specific porous structures are determined by the spatial and temporal distributions of reactions and their rates which are affected by the geometric elements in the system. Because of the intricate relations among the kinetic factors and geometric elements, the detail features of PS morphology and the mechanisms for their formation are complex and greatly vary with experimental conditions. 

Semiconductor structures that develop space charge layers and contact potentials, like films of proper thickness, films with applied external bias, homo- and hetero-(nano)junctions, permit significant suppression of bulk recombination processes and, potentially, allow high quantum yields. Spatial separation of electron and holes also allows the separation of cathodic and anodic processes in a photoelec-trochemical cell (eventually at the micro and nano level), minimizing surface re-... 

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