Solvation point charge approximation

We developed expressions for EOM-CCSD-PCM in the SS formalism, and a series of approximations to reduce the considerable computational cost of this approach. Christiansen and Mikkelsen originally developed the LR formalism for the CCSD wave function in solution for a simple continuum solvation model. Later, they extended it to their flavour of explicit polarizable solvation model. Cammi has also presented several interesting developments in this research area, including a rederivation of the LR-CCSD expressions for PCM, and we presented the first implementation of the method. Other examples of CC methods combined with (non-)polarizable solvation models [e.g., fixed point charges) are also available in the literature. ... 

It should be noted that dissociation of surface complexes of oxygen in polar solvents on semireduced ZnO films is presumably justified from the thermodynamic point of view as oxygen adsorption heat on ZnO and electron work function are [58] 1 and approximately 5 eV respectively while the energies of affinity of oxygen molecules to electron, to solvation of superoxide ion and surface unit charge zinc dope ions are 0.87, 3.5, and higher than 3 eV, respectively [43]. 

At least two points should be especially emphasized, (i) From the solvent part, the parent radical cations exist in a non polar surrounding. Hence, the cations have practically no solvation shell which makes the electron jump easier in respect to more polar solvents. In a rough approximation the kinetic conditions of FET stand between those of gas phase and liquid state reactions, exhibiting critical properties such as collision kinetics, no solvation shell, relaxed species, etc. (ii) The primary species derived from the donor molecules are two types of radical cations with very different spin and charge distribution. One of the donor radical cations is dissociative, i.e. it dissociates within some femtoseconds, before relaxing to a stable species. The other one is metastable and overcomes to the nanosecond time range. This is the typical behavior needed for (macroscopic) identification of FET ... 

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