Single floating zone method

Single crystals of WC were grown by two methods the flux method and the floating zone method. In the flux method, a mixture of 14 mol%WC and... 

Single crystals of cobaltites Lao.xCao CoCL were grown using the floating zone method with radiation heating. The X-ray diffraction analysis at 296 K confirmed that the samples were of single phase with a... 

The substituted garnet plates can be produced by slicing from a single crystal rod grown by the floating zone method or, more economically, from thick films grown onto a host substrate by liquid phase epitaxy (see Section 3.11). The plates are lapped, polished, coated with antireflection layers and then diced to produce the final elements ( 2mm side by 100/mi thickness) ready for assembly into the isolator. 

Single crystals of PrMnOs and TbMnO, were grown by floating zone method and the crystal structure was determined by single crystal X-ray diffractometry. The structure of these compounds belongs to the orthorhombic system (space group is Pnma, No. 62) with the lattice parameters... 

Tanaka I, Obushi T, Kojima H (1988) Growth and characterization of titanite CaTiSiOs single crystals by the floating zone method. J Crystal Growth 87 169-174 Taylor M, Brown GE (1976) High-temperature structural study of the P2]/a <=> A2/a phase transition in synthetic titanite, CaTiSiOs. Am Mineral 61 435-447... 

T. Akashi, H. Iwata and T. Goto, Preparation of BaTi205 single crystal by a floating zone method. Mater. Trans., 44, 802-04 (2003 ... 

Figure 6-17. Et203 single crystal grown by the xenon optical floating zone method. (Reproduced with permission fiomref. 122. Copyright 1999 American Ceramic Society)...

The room-temperature elastic constants of single crystals with the stoichiometry B5 fiC synthesized by the optical floating zone method have been measured using a resonant ultrasound spectroscopy technique [531]. The single crystal elastic constants indicate the strong anisotropy of the structure Cn = 542.81, Cg3 = 534.54, Ci3 = 63.51, C12 = 130.59, and 44= 164.79GPa, respectively. 

In one case, the separate solvent represents and contains the entrained impurities, while in the other case the molten material acts as the solvent to contain the entrained impurities. The method was developed to provide high-purity germanium for semiconductor research following the invention of the semiconductor junction transistor in 1947. It has since been developed into different variations, most notably the floating zone method used for the production of high-purity silicon single crystals. 

At the stage of determining the type of the structure defect of software system works as follows. Initially is the choice of method of growing dislocation-free silicon single crystals (Czochralski method or the floating-zone method) and then is the choice of certain diameter of the crystal. The ratio of / G = theoretically and experimentally determined in a... 

Kuroda, K, I.H. Choi, T. Egi, H. Unoki and N. Koshizuka, 1996, NdBa2Cu3 07 /, single crystals grown by the Travelling Solvent Floating Zone Method, in Proc. ISS 95, Hamamatsu, Japan, eds H. Hayakawa and Y. Enomoto, Vol. VIII of Advances in Superconductivity (Springer, Tokyo) pp. 329-332. 

S Kimura, I Shindo. Single crystal growth of YIG by the floating zone method. J Cryst Growth 41 192, 1977. 

K Takagi, M Ishii. Growth of LaBg single crystals by a laser heated floating zone method. J Cryst Growth 40 1, 1977. 

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