Single crystals, etching

Figure 6. ARXPS depth profile using the As 3d signal from a GaAs single crystal etched in H2SO4-H2O2 solution [24], The conversion from angle to depth is given in Table 4.

A progressive etching technique (39,40), combined with x-ray diffraction analysis, revealed the presence of a number of a polytypes within a single crystal of sihcon carbide. Work using lattice imaging techniques via transmission electron microscopy has shown that a-siUcon carbide formed by transformation from the P-phase (cubic) can consist of a number of the a polytypes in a syntactic array (41). 

Frese Jr KW (1982) Capadtance/voltage studies on etched and anodized single-crystal n-CdSe. J Appl Phys 53 1571-1576... 

Anisotropic etching (i.e. etching of bulk material with etch rates depending on material/crystal orientation, used in single crystal material in order to determine clear features and geometry aspect ratios). 

For good aspect ratio and device geometry, anisotropic etching agents have to exhibit a strong difference in etch rate between crystal directions. In a typical KOH solution for single crystal Si, about a two orders of magnitude smaller etch rate in... 

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