Simultaneous Sputter Coating and LCVD

SIMULTANEOUS SPUTTER COATING AND LCVD 3.1. RF Discharge with Metai Cathode 

As mentioned earlier, the process that utilizes the deposition of sputtered material is often termed sputter coating. The material is sputtered from a target by plasma, and the sputtered material is deposited onto a substrate, which is usually placed out 

The positive ions arrive at the cathode with increased kinetic energy, and the target material (used as the cathode) is removed from its surface by cumulative physical and chemical etching, the magnitude of which is dependent on the nature of the plasma gas. The substrate is placed on the surface of the anode (electrically insulated). Perfluoropropane was used as the plasma gas, and silicon, germanium, molybdenum, tungsten, and copper were employed as the cathode (target materials to be sputtered). 

Among the cathode materials used, silicon and germanium were not incorporated into the plasma polymer because these two materials form volatile fluorides and were pumped out of the system. In contrast, copper, which forms nonvolatile fluoride, was incorporated into the plasma polymer. Once metals were incorporated into the plasma polymers, they were uniformly distributed throughout the plasma polymer matrix. 

The general trends found in this kind of simultaneous sputter coating of molybdenum and LCVD of perfluoropropane are as follows  

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