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Silicon oxidation Deal-Grove model

Oxide Thickness Versus Time. Silicon oxidation has been modeled by using the linear-parabolic macroscopic formulation of Deal and Grove (69). As a starting point for the study of this model, the kinetics of oxidation... [Pg.317]

Silicon Orientation Effects. Thermal oxidation rate is influenced by the orientation of the Si substrate. The effect involves the linear rate constant used in the Deal-Grove model (69). The ratio of this constant, B/A, for... [Pg.326]

FIGURE 3.20. Model for the thermal oxidation of silicon. (Reprinted with permission from Deal and Grove. 1976, American Institute of Physics.)... [Pg.113]

See other pages where Silicon oxidation Deal-Grove model is mentioned: [Pg.332]    [Pg.319]    [Pg.323]    [Pg.2635]    [Pg.1585]    [Pg.1261]    [Pg.1628]    [Pg.889]   
See also in sourсe #XX -- [ Pg.310 , Pg.317 , Pg.319 ]



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Deal-Grove model

Dealness

Grove

Oxidation model

Oxidation silicones

Oxides silicon oxide

Oxidized silicon

Silicon models

Silicon oxidation

Silicon oxidation model

Silicon oxides

Silicone modeling

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