Deal-Grove model

A comparison of the power law description of oxide thickness (equation 68) and the Deal-Grove model is shown in Figure 28. The data of Deal and Grove taken at 700 °C are plotted on linear scales, and equation 66 is plotted with measured values of B/A and t. Shown for comparison is equation 68 with the appropriate constants obtained by a fractional weighted least-square... 

Figure 28. Fits to oxide thickness vs. oxidation time by using the Deal-Grove model and a power law expression (72).

Silicon Orientation Effects. Thermal oxidation rate is influenced by the orientation of the Si substrate. The effect involves the linear rate constant used in the Deal-Grove model (69). The ratio of this constant, B/A, for... 

Conclusion. Existing empirical models such as the Deal-Grove model have been used for many years as a means of estimating oxide thickness as a function of extracted rate constants. The effects of processing on oxidation are included in these rate constants, but generally only by means of measurement. No fundamental basis exists yet for the direct calculation of these... 

Several studies [1,10,12,14,16,19] have interpreted SiC thermal oxidation rates with respect to the Deal and Grove phenomenological model developed for Si [29]. However, the oxidation of the Si face of 6H-SiC does not conform to this model under the oxidation conditions examined [16,19], According to the Deal and Grove model, the oxide thickness, X, as a function of oxidation time, t, follows a mixed linear and parabolic relationship ... 

Oxide Thickness Versus Time. Silicon oxidation has been modeled by using the linear-parabolic macroscopic formulation of Deal and Grove (69). As a starting point for the study of this model, the kinetics of oxidation... 

Numerous other models have been proposed to explain the deviation of dry oxidation from linear-parabolic kinetics. For example, field-assisted oxidant diffiision during the oxidation of metals was proposed by Cabrera and Mott (75) and used by Deal and Grove (69) to explain the results for thin oxides. Ghez and van der Meulen (76) proposed the dissociation of molecular oxygen into atomic oxygen at the Si-Si02 interface and the re-... 

FIGURE 3.20. Model for the thermal oxidation of silicon. (Reprinted with permission from Deal and Grove. 1976, American Institute of Physics.)... 

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