Silicon nanowires images

Figure 6.62. Silicon nanowire growth from a gold nanocluster catalyst. Shown is (a) the phase diagram for the Au/Si system, showing the eutectic temperature/composition (b) SEM image and (c) high-resolution TEM image of the nanowires grown at a temperature of 450° C. The dark tip of the nanowire is from the gold nanocluster. Reproduced with permission from Hu, J. Odom, T. W. Lieber, C. M. Acc. Chem. Res. 1999, 32, 435. Copyright 1999 American Chemical Society.

Figure 3.23 Phase contrast image of silicon nanowire. (Reproduced with permission of Ning Wang.)...

Figure 5 Demonstration of the activity of printed particles. In printed arrays, 60-nm Au particles retain both their catalytic and optical activities, a. Silicon nanowires grown through a vapour-liquid-solid process from a printed array of Au particles (inset is tilted), b, AFM topography and the corresponding dark-field image of particles on the printing plate (top row) and an SEM image and the corresponding dark-field micrograph on a silicon substrate (bottom row the images were mirrored for convenience).

Fig. 19.6 Nanowires used to measure anomalous semiconductor-assisted gas ionization (a) a close-up SEM image of smooth silicon nanowires after annealing in HCl (b, c) SEM micrographs of a forest of, and a single, whiskered silicon nanowire that showed low-voltage FI (d) SEM images of whiskered nanowires after removal of gold catalyst for the tips (e) a three-dimensional schematic illustration of the device used to measure gas ionization on both types of nanowire. Note that the nanowires were planted at the anode.

Figure C.9. Scanning electron micrograph of silicon nanowires (SiNWs) grown via SLS at 1,000°C. Image courtesy of Phil Oshel, Department of Biology, CMU.

Figure 13.16 SiNW transistor fabricated by AFM oxidation nanoiithography. (a] AFM image of a iocai oxide pattern to be used as mask, (b] AFM image of the SiNW connected to two piatinum eiectrodes. (c] High-resolution image of the SiNW shown in (b]. (d] Output (left] and transfer (right] and characteristics of the SiNW transistor. (Data adapted from Ref 90.] Abbreviation-. SiNW, silicon nanowire.

Figure 3.5 (a) Transmission electron microscopy (TEM) image of a biphase coaxial silicon nanowire consisting of a crystalline core and an amorphous sheath (b) A biphase silicon carbide nanowire, where the amorphous material has grown predominantly on one side of the nanowire. Silica nanowires can result from the oxidation of silicon/silica nanowires. 

Figure 2 Lithographic surface modification (A) photolithographic towers and (B) indented square posts (Oner and McCarthy, 2000), (C) diced silicon wafer (Yoshimitsu etal., 2002), (D) photolithographic towers (Zhu etal., 2006a) and (E) silicon nanowires grown on those silicon islands (Cao et al., 2007). Images reprinted with permission from (A, B, C, and E) American Chemical Society, Copyright 2000,2002 and 2007 respectively, (D) Elsevier, Copyright 2006. Adapted with permission of The Royal Society of Chemistry.

NP-functionalized GOx line deposited on a silicon support by DPN. (b) AFM image of the Au nanowire generated by the Au NP-functionalized GOx biocatalytic ink. Reproduced with permission from Ref. 59. Copyright Wiley-VCH Verlag GmbH Co. KGaA. 

To examine the nanowires using SEM, place a drop of nanowires suspended in water directly on an aluminum SEM specimen mount and allow the drop to dry. (To obtain a smoother background in the images, attach a piece of silicon to the specimen mount using carbon tape and place the drop of nanowire suspension on the silicon.) No conductive coating needs to be added. We imaged... 

Fig. 10.23. A typical HRTEM image of GaP nanowires grown at about 750 °C on a silicon (100) substrate. The growth direction is close to the [Oil] direction. The inset is a TEM image of CaP nanowires [40].

Fig. 10.24. A HRTEM image of a GaN nanowire grown at about 900 C on a silicon (100) substrate. The insets are a SEM image (top), the corresponding ED pattern (middle) recorded along the [110] zone axis...

Fig. 6.13 (a) Cross-polarized optical image of patterns of nanowires of 6.25 generated using microchannels on a glass substrate and (b) FESEM image of wire arrays on a silicon substrate. (Adapted from [64])... 

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