Silicon closed-circuit voltage

Most silicon accelerometers are based on a micromachined variable capacitance element (g-cell) that is converted to a voltage using a C-V converter and then amplified, filtered, and buffered to provide an analog output as shown in Fig. 7.1.4. To date, open-loop implementations for capacitive read-out circuits are more widely employed than closed-loop systems, primarily as a result of the stability of such systems [16]. Interface electronics for micromachined sensors depend not only upon the transduction technique (input specification) and the product requirements (output specification) but also on the packaging approach, as parasit-ics are introduced when a multiple-die packaging technique is used. 

The field effect transistors are well-known micro-sized electronic devices that are broadly used in electronic circuits. They are made of a small swab of the silicon substrate. The substrate is lightly p-doped. Two discrete spots placed in a certain distance from each other are strongly n-doped. One of these spots is called the source, while the other is called the drain. If voltage is applied between the source and the drain, then no current flows since the p-doped substrate acts like an insulator between the two n-doped spots. The area above the substrate between the drain and the source is prepared close to the surface but electrically insulated. It is called the Gate. 

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