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Silicon carbide bandgap

Diamond, however, is not the universal semiconductor panacea it is an indirect bandgap semiconductor and does not lase. In addition, present semiconductor materials, such as silicon and gallium arsenide, are solidly entrenched with a well-established technology, and competing with them will not be an easy task. CVD diamond will also compete with silicon carbide, which has also an excellent potential as a high-performance semiconductor material and is considerably easier and cheaper to produce. [Pg.362]

We recently published a chapter in the book Silicon Carbide Recent Major Advances by Choyke et al. [19] that describes SiC gas sensor applications in detail. In this book, we emphasize device properties applications are only briefly reviewed at the end. The device and gas sensing properties of various field-effect chemical gas sensing devices based on SiC are described, and other wide bandgap material devices are reviewed. The detection principle and gas response is explained, and the buried channel SiC-FET device is described in detail. Some special phenomena related to the high-temperature influence of hydrogen at high temperature are also reported. [Pg.30]

A. Hoffmann, L. Eckey [ Proc. Int. Conf. On Silicon Carbide and Related Wide Bandgap Materials Stockholm, 1997 (Trans. Tech Publications, Switzerland, 1998) in press ]... [Pg.72]

Mishima, O. (1990) Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Mater. Res. Soc. Symp. Proc., 162, 543. [Pg.324]

Another important strategy is the adaptation of efficient PV semiconductor thin-films and nanostructures for effective use in PEC applications. Recent research in this area has focused on material classes with inherent bandgap tuning capabilities such as the amorphous silicon compounds (including silicon carbides and nitrides) [109, 112-114, 131, 132], and polycrystalline copper chalcopyrite compounds [133-137]. [Pg.265]

Silicon carbide has favorable properties such as a wide bandgap, high thermal conductivity, high breakdown electric field strength, and high thermal stabihty. It... [Pg.478]


See other pages where Silicon carbide bandgap is mentioned: [Pg.360]    [Pg.362]    [Pg.262]    [Pg.396]    [Pg.1]    [Pg.29]    [Pg.51]    [Pg.634]    [Pg.2135]    [Pg.240]    [Pg.240]    [Pg.574]    [Pg.168]    [Pg.261]    [Pg.123]    [Pg.172]    [Pg.430]    [Pg.270]    [Pg.633]    [Pg.321]    [Pg.128]   
See also in sourсe #XX -- [ Pg.2 ]




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