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Silanes formation

A schematic of the proposed growth model is shown in Fig. 10.23. In this model, Co nanoparticles play a dual catalytic role. On the one hand, they catalyze silane formation by reacting first with silicon to form Co silicides, and then react with hydrogen to form silane while being reduced to Co metal. The second role of Co nanoparticles is their classic catalytic ability of making nanowires by first dissolving the silane and precipitating out Si nanowires. [Pg.177]

From these observations, Woerpel and Cleary proposed a mechanism to account for allylic silane formation (Scheme 7.23).85 Silacyclopropane 94 is formed from cyclohexene silacyclopropane 58 through silylene transfer. Coordination of the Lewis basic benzyl ether to the electrophilic silicon atom86-88 generates pentacoordinate siliconate 95 and increases the nucleophilicity of the apical Si-C bond.89 Electrophilic attack by silylsilver triflate 96 forms silyl anion 97. Intramolecular deprotonation and elimination then affords the silylmethyl allylic silane. [Pg.200]

A mechanism for catalysis by platinum compounds was proposed in 1965 by Chalk58) and has since been supported by increasing knowledge about silyl-metal systems and by the direct detection of Pt-Si211) and Rh-Si61,18s) complexes in the reaction mixtures. The suggested mechanism requires olefin coordination to the Pt(II) species (in the case of H2PtCl6 formed by reduction by the silicon hydride), oxidative addition of the silane, formation of an intermediate in which silicon and alkyl are both bonded to the platinum center, and reductive elimination of alkylsilane, probably assisted by coordination of more olefin ... [Pg.152]

In poly silane formation by the previously mentioned route, the products were complex and contained high-molecular-weight materials (molecular weight > 10 ) after only 10% of the dichloride had reacted. In the presence of a twofold excess or a 10% deficit of sodium, an appreciable amount of high-molecular-weight polymer was formed. Attempts to isolate dimers after 50% of the dichloride had reacted failed. The product with the lowest molecular weight was a cyclic pentamer. The polymerization, in fact, demonstrates some of the characteristics of a chain reaction as found in addition polymerization. [Pg.300]

Cleavage of Si—N bonds with LiBH results in silane formation, although the reactions are not often synthetically useful ... [Pg.220]

The need for acid rather than water for silane formation from silicides is one of the reasons why these gases have not found practical application as illuminants. Another reason is that the flaming is accompanied by some explosive action. Chemists, who bum magnesium ribbon on ceramic dishes or heat the powder in glass tubes and subsequently attempt to clean the vessels with hydrochloric acid, experience the crackling noises accompanying the scintillating combustion of the... [Pg.20]

This greater reactivity of the silanes may be due to several factors, for example, the easier approach of an oxygen molecule (which may attach initially to the silane by use of the vacant silicon d orbitals) and the formation of strong Si—O bonds (stronger than C—O). [Pg.176]

Hydride attacks regioselectively at the Si-substituted carbon in the hydro-genolysis of the silylated allylic carbonate 626 with formate, affording the allylic silane 627[I42]. [Pg.376]

In most cases, CVD reactions are activated thermally, but in some cases, notably in exothermic chemical transport reactions, the substrate temperature is held below that of the feed material to obtain deposition. Other means of activation are available (7), eg, deposition at lower substrate temperatures is obtained by electric-discharge plasma activation. In some cases, unique materials are produced by plasma-assisted CVD (PACVD), such as amorphous siHcon from silane where 10—35 mol % hydrogen remains bonded in the soHd deposit. Except for the problem of large amounts of energy consumption in its formation, this material is of interest for thin-film solar cells. Passivating films of Si02 or Si02 Si N deposited by PACVD are of interest in the semiconductor industry (see Semiconductors). [Pg.44]

Sihca is reduced to siUcon at 1300—1400°C by hydrogen, carbon, and a variety of metallic elements. Gaseous siUcon monoxide is also formed. At pressures of >40 MPa (400 atm), in the presence of aluminum and aluminum haUdes, siUca can be converted to silane in high yields by reaction with hydrogen (15). SiUcon itself is not hydrogenated under these conditions. The formation of siUcon by reduction of siUca with carbon is important in the technical preparation of the element and its alloys and in the preparation of siUcon carbide in the electric furnace. Reduction with lithium and sodium occurs at 200—250°C, with the formation of metal oxide and siUcate. At 800—900°C, siUca is reduced by calcium, magnesium, and aluminum. Other metals reported to reduce siUca to the element include manganese, iron, niobium, uranium, lanthanum, cerium, and neodymium (16). [Pg.471]

The formation of silane from magnesium siUcide by acidic hydrolysis is thought to involve one of two paths after formation of a dihydroxymagnesiosilane intermediate (56). [Pg.23]

Reduction of halosilanes with hydtides leads to the formation of hydtide functional silanes and is considered in that section. [Pg.32]

Oxane bonds, M—O—Si, are hydroly2ed during prolonged exposure to water but reform when dried. Adhesion in composites is maintained by controlling conditions favorable for equiUbrium oxane formation, ie, maximum initial oxane bonding, minimum penetration of water to the interface, and optimum morphology for retention of silanols at the interface. The inclusion of a hydrophobic silane, such as phenyltrimethoxysilane [2996-92-17, with the organofunctional silane increases thermal stabiUty of the silane and make the bond more water resistant (42). [Pg.74]

The formation of covalent bonds between resin molecules in a coating and the surface of the substrate can enhance adhesion. Thus, adhesion to glass is promoted by reactive silanes having a trimethoxysilyl group on one end that reacts with a hydroxyl group on the glass surface. The silanes have... [Pg.347]

All of the atomic species which may be produced by photon decomposition are present in plasma as well as the ionized states. The number of possible reactions is therefore also increased. As an example, die plasma decomposition of silane, SiH4, leads to the formation of the species, SiH3, SiHa, H, SiH, SiH3+ and H2+. Recombination reactions may occur between the ionized states and electrons to produce dissociated molecules either direcdy, or tlrrough the intermediate formation of excited state molecules. [Pg.84]

Dianion formation from 2-methyl-2-propen-l-ol seems to be highly dependent on reaction conditions. Silylation of the dianion generated using a previously reported method was unsuccessful in our hands. The procedure described here for the metalation of the allylic alcohol is a modification of the one reported for formation of the dianion of 3-methyl-3-buten-l-ol The critical variant appears to be the polarity of the reaction medium. In solvents such as ether and hexane, substantial amounts (15-50%) of the vinyl-silane 3 are observed. Very poor yields of the desired product were obtained in dirnethoxyethane and hexamethylphosphoric triamide, presumably because of the decomposition of these solvents under these conditions. Empirically, the optimal solvent seems to be a mixture of ether and tetrahydrofuran in a ratio (v/v) varying from 1.4 to 2.2 in this case 3 becomes a very minor component. [Pg.65]


See other pages where Silanes formation is mentioned: [Pg.313]    [Pg.116]    [Pg.137]    [Pg.116]    [Pg.314]    [Pg.51]    [Pg.337]    [Pg.6032]    [Pg.313]    [Pg.116]    [Pg.137]    [Pg.116]    [Pg.314]    [Pg.51]    [Pg.337]    [Pg.6032]    [Pg.85]    [Pg.101]    [Pg.495]    [Pg.21]    [Pg.21]    [Pg.23]    [Pg.23]    [Pg.25]    [Pg.28]    [Pg.537]    [Pg.466]    [Pg.37]    [Pg.44]    [Pg.65]    [Pg.299]    [Pg.408]    [Pg.409]    [Pg.410]    [Pg.411]    [Pg.416]   
See also in sourсe #XX -- [ Pg.64 , Pg.158 , Pg.171 , Pg.172 , Pg.179 , Pg.181 , Pg.190 , Pg.194 , Pg.200 ]




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