SiC dc-ac inverter

In this section, we have described a demonstration of an all-SiC dc-ac inverter (using SiC power switches and SiC diodes) operated in excess of 400W and at case temperatures of approximately 150°C. Two factors related to the system s implementation limited the operational power levels of this circuit. First, load instability caused excessive current spikes and GTO failures and was corrected using a closed-... 

The first report of an all-SiC, three-phase dc-ac inverter was presented by Seshadri et al. [17] in 1999. Although Seshadri s inverter used SiG GTOs and p-/-n diodes, it was operated at ambient temperature and at voltage and current levels so low that the authors were unable to ...determine typical switching characteristics of the individual SiG components. From the standpoint of technology development, there exists a need to evaluate SiC technology under relevant circuit stresses. 

Figure 3.16 Schematic diagram of a SiC gate turnoff thyristor-based, dc-ac inverter power stage.

In 2001, the authors of this chapter developed a 400-W, dc-to-ac inverter using SiC GTOs and p-/-n diodes for operation at case temperatures up to 150°C for driving three-phase, inductive loads up to 5 SOW. The inverter circuit was constructed to perform the first characterization of these SiC devices under significant electrical and thermal stresses, investigate the parametric operating space of the SiC devices, and uncover circuit-related failure modes. 

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