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Si oxides

7 Oxides Based on Alloying/De-alloying Reaction 10.7.1 Si Oxides [Pg.361]

Since silicon suffers from the huge change of volume upon lithiation-delithiation, SiO has been viewed as an alternative. SiO is a mixture of amorphous Si and amorphous silica. Lithium oxide (Li20) is generated during the first lithiatirMi  [Pg.361]

A different approach comes from the consideration that the Si02 in dispropor-tionated SiO has been considered as a main matrix phase and a cause of the initial irreversible reaction [421]. Hence the idea to reform this matrix phase to retain less irreversible electrochemical reactivity and more reinforced mechanical properties. This has been done in ref. [422], where a nanostructured SiAlo.20 composite material has been developed via mechanochemical synthesis. The compositional structure of the matrix is aluminosilica in which most of Si atoms are neighbored with two A1 atoms over oxygen. This composite offered a capacity of 800 mAh g over 100 cycles at a current density of 120 mA g  [Pg.363]

It should also be noted that attention should be taken to the fact that the performance of SiO-anodes depend importantly on the choice of binder, which makes difficult the quantitative comparison of the electrochemical performance between different works. The study of the electrochemical properties for different binders has been made by Komaba et al. [423] who showed that the electrochemical reversibility of SiO anodes is drastically improved by using polyfacrylic acid) (PAA) as the binder in comparison to the PVdF, sodium carboxymethyl cellulose (NaCMC), and polyfvinyl alcohol) PVA hinders. Polyimide as hinder was also found to give very good results [424], A concern with SiO is the thermal instahility due to the sudden exothermic peak in the region of 350-400 °C. This enthalpy peak, however, is importantly reduced (hut not suppressed) hy coating SiO with anatase TiOa [425]. This has been attributed to the thermal stability of lithiated Ti02 and its SEI [279, 280]. [Pg.363]


Western Woodlaik Basin Franklin Seamount (9°55 S, 151L50 W) 2143-2366 Westernmost propagating tip of spreading center. Basaltic andesite and inferred sodic rhyolite. Spires aud mounds of Fe-Mn-Si oxide up to several meters thick and 200 m in extent. Venting 20-30 C clear solution. Inactive barite silica chimneys contain up to 21 ppm Au. vSi-bearing Fe oxyhydroxide. [Pg.341]

Si02 or with other Si-based refractories such as Si3N4 and SiC. Other ultrahard coatings are also of use, but may require an intermediate buffer layer of Si oxide. [Pg.267]

This band is at a lower frequenqf than that of the Si-O stretch in pure Si oxide gel (1080 cm ) probably because the Si-O stretch is influenced by neighbouring Fe atoms. For adsorbed arsenate and selenate on ferrihydrite, Harrison Berkheiser (1982) reported a poorly resolved doublet at 805 and 875 cm , and weak bands at 700 cm and at 820, 880 and 910 cm respectively. These were attributed to splitting of the fundamental v vibration. [Pg.145]

The CgQ surface coverage was determined to be 2.0 10 mol cm . The monolayer can be further modified with monomeric amine reagents, which demonstrates the potential of the self-assembly process for growing three-dimensional fullerene structures. Different surfaces such as quartz. Si-oxide [105] or ITO [102] were coated with multilayers of fullerene up to stacks of 9 layers. An imidirectional electron transfer is possible across the fullerene mulhlayers [102]. Not only can multiple layers of fullerenes be connected to a certain surface but amino-functionalized can also serve as a linker between two different surfaces. 3-Aminopropyl-tethered glass plates could be linked via a Cgg layer to 3-aminopropyl covered zeolite crystals [106]. [Pg.91]

The compounds 43, 45, 48b and 48c gave the corresponding disUoxanes in quantitative yields, and BTSP is converted into hexamethyldisUoxane, 44, formed from difluorote-tramethyldisiloxane. The reaction of 44 with BTSP was not inhibited by 2,4,6-tri(t-butyl)phenol. Compound 48a did not react with di-f-butyl peroxide, which is the carbon analog of BSTP, suggesting an important role of vacant rf-orbitals of the silicon atom. The Si—Si oxidation of compound 49 with BSTP proceeds quantitatively and in a stereospecific fashion (equation 72) . ... [Pg.806]

Mori has reported the nickel-catalyzed cyclization/hydrosilylation of dienals to form protected alkenylcycloalk-anols." For example, reaction of 4-benzyloxymethyl-5,7-octadienal 48a and triethylsilane catalyzed by a 1 2 mixture of Ni(GOD)2 and PPhs in toluene at room temperature gave the silyloxycyclopentane 49a in 70% yield with exclusive formation of the m,//7 //i -diastereomer (Scheme 14). In a similar manner, the 6,8-nonadienal 48b underwent nickel-catalyzed reaction to form silyloxycyclohexane 49b in 71% yield with exclusive formation of the // /i ,// /i -diastereomer, and the 7,9-decadienal 48c underwent reaction to form silyloxycycloheptane 49c in 66% yield with undetermined stereochemistry (Scheme 14). On the basis of related stoichiometric experiments, Mori proposed a mechanism for the nickel-catalyzed cyclization/hydrosilylation of dienals involving initial insertion of the diene moiety into the Ni-H bond of a silylnickel hydride complex to form the (7r-allyl)nickel silyl complex li (Scheme 15). Intramolecular carbometallation followed by O-Si reductive elimination and H-Si oxidative addition would release the silyloxycycloalkane with regeneration of the active silylnickel hydride catalyst. [Pg.388]

The detailed mechanism for the formation of reduced Cu+ species under the hydrothermal synthesis conditions in the presence of CTAB without any additional reducing reagent is not clear at present, but the degree of reduction of the Cu- and oxide-precursors may depend on the oxophilicity of metal oxides Cu oxide (most reducible) < Mo oxide < Zn oxide < Si oxide < A1 oxide Zr oxide Ce oxide (hard to reduce). Further, chemical interaction of the Cu + clusters with the Ce02 surface may also be the key to stabilizing the Cu + clusters on the support. [Pg.55]

Source Reprinted from Wang, M. C., and Huang, P. M. (2000). Ring cleavage and oxidative transformation of pyrogallol catalyzed by Mn, Fe, Al, and Si, oxides. Soil Sci. 165, 934-942, with permission from Lippincott Williams Wilkins. [Pg.80]

Shindo, H. (1992). Relative effectiveness of short-range ordered Mn(IV), Fe(III), Al, and Si oxides in the synthesis of humic acids from phenolic compounds. Soil Sci. Plant Nutr. 38, 459 165. [Pg.105]

The 170 nucleus was also studied by the same workers67 for some zeolites. Considerable potential is envisaged by Oldfield and co-workers for using 170 n.m.r. for structural analyses of inorganic solids and they demonstrate this for Mg, Al, and Si oxides and a Ca Mg silicate.106... [Pg.96]

Perbenzoic acid reacts with organic disilanes by oxidation to the corresponding disiloxanes488) in a second-order reaction. A substitution on the phenyl group of the phenylpentamethyl-disilanes increases the nucleophilic reaction rate of the Si-Si oxidation and increases pw— d conjugation from the phenyl-group to the silicon. [Pg.30]

The broad oxidation processes at E > 0 mV are partly due to Si oxidation, gold oxidation and oxidation of cation reduction products. [Pg.158]

Delay Element. This term may also be applied to a component which provides a specific delay in a blasting cap, detonator, fuze, etc Refs l)0hart (1946), 20 278 2)H.M.Kerr C.R.Hall USP 2560452 (1951) CA 46, 1259 (1952) [Delay elements for electric blasting caps consist of homogeneously mixed powdered metals (such as Mg, Al, Ni, Zn), fuels (such as Si), oxidizers (such as Pb C ) and Misch -metall . By varying the compns, burning times of 15 to 579 milliseconds were obtained] [The Misch-metall (Ger for mixed metal ) is an alloy of rare earths of the following compn ... [Pg.473]

For an examination of the H20 destabilization on the Si oxide surface containing A1 which possibly promote a transformation of DME to methanol in the steam reforming process, model clusters employed are shown in Figures 25.4-25.8. A cluster shown in Figure 25.4 is a model of a bulk Si oxide, which is a reference material here. In this cluster, Si atoms are located at (0,0,0),... [Pg.344]

Figure 25.7 Model of H20 adsorbed on Si oxide surface with Al. Figure 25.7 Model of H20 adsorbed on Si oxide surface with Al.

See other pages where Si oxides is mentioned: [Pg.2614]    [Pg.976]    [Pg.473]    [Pg.241]    [Pg.236]    [Pg.108]    [Pg.480]    [Pg.85]    [Pg.278]    [Pg.256]    [Pg.76]    [Pg.474]    [Pg.39]    [Pg.221]    [Pg.255]    [Pg.326]    [Pg.252]    [Pg.7]    [Pg.134]    [Pg.74]    [Pg.77]    [Pg.78]    [Pg.79]    [Pg.108]    [Pg.187]    [Pg.363]    [Pg.341]    [Pg.343]    [Pg.345]    [Pg.345]    [Pg.345]    [Pg.346]    [Pg.350]    [Pg.350]   
See also in sourсe #XX -- [ Pg.341 , Pg.350 , Pg.353 , Pg.359 ]

See also in sourсe #XX -- [ Pg.361 , Pg.362 , Pg.363 ]




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