Si doping

The Si-doped Fe compound, GU5 5SiDi 5Fe4Sni2S32, shows a very small decrease in the Cu-S bond length from 2.320 A in the parent compound (Gug... 

Fe4Sni2S32) to 2.319 A in the Si-doped compound studied here. This may be due to the doping of Si atoms. The size of Si" is smaller in comparison to the size of Cu and this would lead to the smaller Cu-S bond length in the Si-doped compound [22]. The Fe/Sn-S distances do not show much change, being 2.536 A in the pure compound and 2.5365 A in the Si-doped sample. Selected bond distances are given in Table 15.2. 

The electrical resistivity of the Si-doped quaternary thiospinel, Cus.sSiDi.s Fe4Sni2S32 has been measured, in the temperature range 100 K to 300 K. It was found that it behaves like a semiconductor from room temperature down to 100 K. From the log p ys 1/T plot (see inset of Fig. 15.4) the band gap is found to be 0.107 eV in the temperature range (170 -300 K). The room-temperature resistivity is around 3.1x10 Q-cm (Fig. 15.4). 

Surface hydrogen is conveniently detected by MIR at attenuated-total-internal-reflection prisms of GaAs electrodes. Si-doped (100)-oriented n-GaAs single crystals were employed in the electrochemical cell illustrated schematically in Figure 3.3. 

Fig. 14. The 1-H line at 6 K in n+ GaAsiSi implanted with a 500 nA current of 190 keV protons. The spectral resolution is 0.4 cm 1, (a) as implanted, (b) after 20 min. annealing at 200°C. (c) after additional 20 min. annealing at 400°C. The apparent increase of the absorption coefficient in (c) is due to the diffusion of hydrogen throughout the Si-doped layer. B. Pajot et al., Mat. Res. Soc. Symp. Proc, 104, 345 (1988). Materials Research Society.

J. Campos-Delgado, I. 0. Maciel, D. A. Cuiien, D.J. Smith, A. Jorio, M. A. Pimenta, H. Terrones, M. Terrones, Chemical vapor deposition synthesis of N-, P-, and Si-doped singie-waiied carbon nanotubes, ACS Nano, vol. 4, pp. 1696-1702, 2010. 

K. H. Er, S. G. So, The mechanical and structural properties of Si doped diamond-like carbon prepared by reactive sputtering., Journal of Ceramic Processing Research, vol. 12, pp. 187-190, 2011. 

Cesar 1, Kay A, Martinez, JAG, Gratzel M (2006) Translucent thin film Fe203 photoanode for efficient water splitting by sun light nanostrucutre directed effect of Si doping. J Am Chem Soc 128 4582-4583... 

FIGURE 2 10 K luminescence in the excitonic energy range of undoped, Si-doped and slightly Mg-doped GaN. The samples are grown by MBE on (0001) sapphire. After [35],... 

Capacitance transient spectroscopy encompasses a powerful set of techniques to detect and characterise deep levels in semiconductors. The list of techniques applied for III-V nitrides includes deep level transient spectroscopy (DLTS) [1,2], double correlation DLTS (DDLTS) [3], isothermal capacitance transient spectroscopy (ICTS) [2], photoemission capacitance transient spectroscopy (ODLTS) [4] and optical ICTS (OICTS) [5], This Datareview presents the current status of deep level studies by capacitance transient techniques for III-V nitrides. A brief introduction to the techniques is given, followed by an example that demonstrates the application of DLTS and DDLTS for Si-doped... 

D DEEP LEVELS IN III-V NITRIDES D1 n-Type Undoped and Si-Doped GaN... 

---