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Short gold contacts

Figure 3.19 Short gold contacts in the polymeric complexes. Figure 3.19 Short gold contacts in the polymeric complexes.
Figure 1.7 Association of [AuXL] complexes in dimers (B),trimers (C), tetramers (D) or chain polymers (E) through short gold-gold contacts. Figure 1.7 Association of [AuXL] complexes in dimers (B),trimers (C), tetramers (D) or chain polymers (E) through short gold-gold contacts.
Bis(diphenylphosphino)methane also gives the trinuclear complex (47), in which there are two linear ClAuP and one linear AuP2 unit, with short gold-gold contacts.104... [Pg.884]

The report from Balch s laboratory describes the synthesis of the complex [Pt(NH3)4][Au(CN)2] 1.5(H20).69a Its structure displays two [Au(CN)2] ions above and bellow the plane of one [Pt(NH3)4]2+ cation, with Pt-Au interactions of 3.2804(4) and 3.2794(4) A. These units are arranged into extended chains through short gold-gold interactions of 3.1902(4) A. Additional cross-linking of these chains occur through Au Au contacts of similar lengths. [Pg.359]

The following preparation of the two gold contacts separated from each other by the short-channel is carried out as described before. The device to be discussed below has a channel length of L = 1 pm and a width of w = 250 pm. In this device the polymer used is poly[l,4-phenylene-(4-methylphenyl)imino-4,48-diphenylene-(4-methylphenyl) imino- 1,4-phenylenevinylene-2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] TPD(4M)-MEH-PPV. Results with this polymer obtained with long-channel transistors in BOC and TOC geometry have been published recently [7]. [Pg.176]

CBD from SbCls, NaiSiOs and annealed at 300 °C in a nitrogen atmosphere and cooled in air to allow a passivation layer of S2O3 to form CuSCN, deposited from a solution in 1 1 di-n-propyl sulfide and PrS infiltrated into the pores at 65 °C a 80 nm gold contact was deposited by evaporation. KCN treatment prior to CuSCN deposition was found to increase the short-circuit current as a result of doping with excess SCN . The device was aged for a few days. The IPCE matched the optical spectra of SbiSs and the external quantum efficiency was as high as 80% between 450 nm and 520 nm. The reported efficiency was 3.37% at 1 sun (/sc = 14.1 mA cm Voc = 490 mV, FF = 0.488). [Pg.211]


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