Shallow junction formation

Abstract Ultra-shallow junction formation in metal oxide semiconductor field effect... 

Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., Chu, W-K. Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation. J. Appl. Phys. 96, 919-921 (2004)... 

Ion implantation has become the dominant doping technique, particularly in the fabrication of bipolar-CMOS devices and in the formation of shallow junctions. Laser ablation sampling coupled with ICP-MS was applied recently to the determination of total dopant dose. Since this technique spatially and temporally separates the sampling and ionization steps, it has the potential to produce more quantitative results than SIMS for trace elements in a given matrix. Wafer surface analysis can also be used to monitor the contamination induced hy different process steps. The importance, in terms of contamination contrihution, of the chamber components used for film deposition and ion implantation was demonstrated, as was the effect of cleaning bath solution purity. ... 

The formation of shallow n- and p-type layers and junctions is now exclusively done by ion implantation, in which the wafer is bombarded with high-energy donor or acceptor atoms generated in a high-voltage particle accelerator. ... 

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