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Ultra-shallow junction

Abstract Ultra-shallow junction formation in metal oxide semiconductor field effect... [Pg.89]

Xuhel, M., Laugier,E, DehUe, D.,Wyon, C, Kwakman, L., Hopstaken, M. (2006) SIMS depth profiling of boron ultra shallow junctions using obliqne 02 beams down to 150 eV. Applied Surface Science, 252,7211-7213. [Pg.935]

Laviron, T. Noguchi, Infrared spectroscopac ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI, Thin Solid Films, 455-456 (2004) 150-156. [Pg.78]

See other pages where Ultra-shallow junction is mentioned: [Pg.88]    [Pg.90]    [Pg.90]    [Pg.91]    [Pg.196]    [Pg.223]    [Pg.152]    [Pg.196]    [Pg.223]    [Pg.88]    [Pg.90]    [Pg.90]    [Pg.91]    [Pg.196]    [Pg.223]    [Pg.152]    [Pg.196]    [Pg.223]   
See also in sourсe #XX -- [ Pg.89 , Pg.90 ]



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