Sensors current-voltage characteristics

It is possible to influence both the position of the base line and the size of the gas response by the application of a negative potential on the substrate [97, 98]. The drain current-voltage characteristics of a chemical gas sensor based on an... 

Current-Voltage Characteristics of Platinoid and Graphite Electrodes in Air. The SPE sensor cells have been optimized for detection of certain oxidizable or reducible species in air. To achieve this, the sensing electrode is maintained at a voltage when there is minimal interference by the O2 in the air. The two electrodes studied in detail have been platinoid and graphite sensing electrodes. 

The complete current-voltage characteristics of the sensor can be derived from the similar consideration that was used for derivation of the i-E curve for liquid electrolytes. Because the potentials at each electrode are reversible, their difference can be expressed by the Nernst equation for the concentration of oxygen at the anode Co(0) and at the cathode Co (A). The current flowing through the layer generates a voltage drop iRb, where Rb is the bulk resistance of the ZrC>2 layer. 

Fig. 10.3 illustrates the current-voltage characteristics of a p-i-n sensor in the dark and in light. The photocurrent rapidly saturates in reverse bias when there is full collection of the incident absorbed photon flux. The photovoltaic properties in slight forward bias are characterized by the short circuit current J, the open circuit voltage, Vog, and the fill factor, F. The maximum power delivered by the device is the product of the three terms... 

Fig. 10.3. Schematic of the current-voltage characteristics of a p-i-n sensor in the dark and under illumination.

Fig. 10.6. Examples of the forward bias current-voltage characteristics of p-i-n sensors, compared to a Schottky barrier device.

Figure 1. Current-Voltage Characteristics of a 0.22 mg/cm Pt/C 11 Nafion // 0.25 mg/cm Pt/ Ru/C sensor at room temperature.

Fig. 39. Current-voltage characteristics in the limiting current type sensor.

Simons AJ, Cox TI, Uren MJ et al (1995) The electrical properties of porous silicon produced from n + silicon substrates. Thin Solid Films 255 12-15 Skryshevsky VA, Strikha VI, Mamikin AV et al (1998) Availability of current -voltage characteristics for porous silicon gas sensors, Discrete gas sensor. Paper presented at eorosensors XII13-16 Sept 277-280... 

Carbon Nanotube (CNT)-based Microelectromechan-ical Systems (MEMS) Flow Sensors. CNT-based MEMS flow sensors can be used to detect air flow inside a poly(methyl methacrylate) (PMMA) microfluidic chamber [9]. Figure 6 shows the sensor s system prototype. The system applies the principle of heat transfer by electrical current heating, flow resistance dependency and current-voltage characteristics to measure gas flow velocities. 

Fig. 11. Typical current-voltage characteristics of the sensor (Takeuchi and Igarashi 1988). (Reprinted by permission of the publisher, Kodansha Ltd.)...

Sensor voltage characteristics of the thick film oxygen sensor. Experimental data show that sensor voltage characteristics of the thick film oxygen sensor vary greatly with the value of the sensor current. 

At 1=0, in a steady state condition, the sensor voltage is a constant zero and is independent of the oxygen partial pressure in the exhaust gas. As shown in the calculated results (See Figure 10), both Po2(l) and P0g(o) depend on the air-fuel ratio. But Po2(l) is always equal to Po2(0) (See Equation 38) thus, E becomes zero (See Equation 39). In this case, the internal total pressure Pq1 is equal to 1 atm. Experimental data show on-off type sensor voltage characteristics in a rich atmosphere when a current is applied to the sensor. (See Figures 5 and 6)... 

Measurements of current-voltage (I/U) characteristics have been made with an account of the concept of tunable electronic material with pores in oxide of semiconductors (TEMPOS) [3-6]. TEMPOS structures, depending on the preparation details, may resemble the features of resistors, capacitors, diodes, transistors, photocells or sensors. It is worth noting that similar I/U characteristics under the influence of humidity were observed earlier [4] on the TEMPOS samples consisting of a SiOi layers with ion tracks covered with continuous fullerite layers on Si substrates. This structure has got the name of MOSBIT (moistutre sensor with buckminsterflillerene in the tracks). 

Figure 13.14. Drain current vs gate bias voltage characteristics of the pH sensor [17].

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