Semiconductors metal oxynitrides

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Phosphorus oxynitride, PON, is a useful starting product, as a phosphorus and nitrogen source, to prepare various nitridooxophos-phates, in particular phosphorus oxynitride glass compositions (211). Moreover, it shows as a material excellent chemical stability with potential applications in several domains. In microelectronics, for example, PON has been used to form by evaporation insulating films for the passivation of III-V InP substrates and the elaboration of MIS (metal-insulator-semiconductor) structures (190, 212-215). PON could have also valuable properties in flame retardancy (176,191,216). 

In the case of alloys, we will consider, in turn, metal oxides, metal chalcogenides and, finally, Group III-V semiconductors. We have seen earlier (Sections 6.3 and 7) how non-metallic elements such as F, N and S can alloy with the metal oxide lattice, these species occupying anion sites within the host framework. The corresponding oxyfluoride, oxynitride and oxysulfide compounds are thus generated (Section 7). 

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