Dielectric constant semiconductors

Dielectric Constant The dielectric constant of material represents its ability to reduce the electric force between two charges separated in space. This property is useful in process control for polymers, ceramic materials, and semiconductors. Dielectric constants are measured with respect to vacuum (1.0) typical values range from 2 (benzene) to 33 (methanol) to 80 (water). The value for water is higher than that for most plastics. A measuring cell is made of glass or some other insulating material and is usually doughnut-shaped, with the cylinders coated with metal, which constitute the plates of the capacitor. 

Dielectric constants of metals, semiconductors and insulators can be detennined from ellipsometry measurements [38, 39]. Since the dielectric constant can vary depending on the way in which a fihn is grown, the measurement of accurate film thicknesses relies on having accurate values of the dielectric constant. One connnon procedure for detennining dielectric constants is by using a Kramers-Kronig analysis of spectroscopic reflectance data [39]. This method suffers from the series-tennination error as well as the difficulty of making corrections for the presence of overlayer contaminants. The ellipsometry method is for the most part free of both these sources of error and thus yields the most accurate values to date [39]. 

Here, E and s are the band gap energy and the dielectric constant of the bulk semiconductor, and p is the reduced 0 mass of the exciton system, 1/p = + 1/fffi,. The second tenn, proportional to /R, arises from a simple... 

In the electronics industry. Pis find wide appHcations as a dielectric material for semiconductors due to thermal stabiHty (up to 400°C) and low dielectric constant. Pis are being considered for use in bearings, gears, seals, and prosthetic human joints. The intended part can be machined or molded from the PI, or a film of PI can be appHed to a metallic part. Because of their superior adhesion, dielectric integrity, processing compatibUity, and lack of biological system impact. Pis have been used in many biological appHcations with particular success as body implants. 

Semiconductors (qv) are materials with resistivities between those of conductors and those of insulators (between 10 and 10 H-cm). The electrical properties of a semiconductor determine the hmctional performance of the device. Important electrical properties of semiconductors are resistivity and dielectric constant. The resistivity of a semiconductor can be varied by introducing small amounts of material impurities or dopants. Through proper material doping, electron movement can be precisely controlled, producing hmctions such as rectification, switching, detection, and modulation. 

Electrical and Electronic. Diamond is an electrical insulator (-- lO H/cm) unless doped with boron when it becomes ap-ty e semiconductor with a resistivity in the range of 10 to 100 Q/cm. n-Ty e doping has often been claimed but is less certainly estabUshed. The dielectric constant of diamond is 5.58. 

More subtle effects of the dielectric constant and the applied bias can be found in the case of semiconductors and low-dimensionality systems, such as quantum wires and dots. For example, band bending due to the applied electric field can give rise to accumulation and depletion layers that change locally the electrostatic force. This force spectroscopy character has been shown by Gekhtman et al. in the case of Bi wires [38]. 

The common example of real potential is the electronic work ftmction of the condensed phase, which is a negative value of af. This term, which is usually used for electrons in metals and semiconductors, is defined as the work of electron transfer from the condensed phase x to a point in a vacuum in close proximity to the surface of the phase, hut heyond the action range of purely surface forces, including image interactions. This point just outside of the phase is about 1 pm in a vacuum. In other dielectric media, it is nearer to the phase by e times, where e is the dielectric constant. 

Zinc oxide is a thoroughly studied typical semiconductor of n-type with the width of forbidden band of 3.2 eV, dielectric constant being 10. Centers responsible for the dope electric conductivity in ZnO are provided by interstitial Zn atoms as well as by oxygen vacancies whose total concentration vary within limits 10 - 10 cm. Electron mobility in monocrystals of ZnO at ambient temperature amounts to 200 cm -s". The depth of donor levels corresponding to interstitial Zn and oxygen vacancies under the bottom of conductivity band is several hundredth of electron volt [18]. 

Thus, it is quite natural to consider the properties of other acceptor particles, for example, atoms of nitrogen, aminoradicals, hydroxyl radicals, and many others, adsorbed on oxide semiconductors. However, the properties of these particles are not studied yet. As to adsorbed donor particles, it was found in our experiments that liquid media with different values of the dielectric constant do not have any influence on the properties of adsorbed atoms of hydrogen. 

Static coefficient, 15 205 Static dielectric constant (e0), of compound semiconductors, 22 150t, 151 Static electroanalytical measurements, 9 586... 

Vfb the flat-band potential and e the dielectric constant of the semiconductor. From Eq. (10.1) the flat band potential for an electrolytic contact can be calculated from measurements of Csc (V) if Nd is known or Vn, can be graphically determined by extrapolation of a Csc 2 versus V plot to zero capacitance, as shown in Fig. 10.2. The value of 0.75 V found for p-type Si, however, is unrealistically high. 

Chapter 4, presents details of the absorption and reflectivity spectra of pure crystals. The first part of this chapter coimects the optical magnimdes that can be measured by spectrophotometers with the dielectric constant. We then consider how the valence electrons of the solid units (atoms or ions) respond to the electromagnetic field of the optical radiation. This establishes a frequency dependence of the dielectric constant, so that the absorption and reflectivity spectrum (the transparency) of a solid can be predicted. The last part of this chapter focuses on the main features of the spectra associated with metals, insulators, and semiconductors. The absorption edge and excitonic structure of band gap (semiconductors or insulator) materials are also treated. 

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