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Semiconductor FET MESFET

To calculate the current-voltage characteristic of a MESFET, we assume that the conducting channel is at thermal equilibrium, and the space-charge layer completely depleted. Eq. (14.28) becomes [Pg.475]

Substituting (14.36) into (14.35) and integrating from source (x=0) to drain (a=L) we find [Pg.476]

Inserting (14.40) into (14.37) leads to the expression of the saturation current [Pg.476]


Metal selenides, 22 87 Metal semiconductor FETs (MESFETs), 22 163. See also Field effect transistors (FETs)... [Pg.570]

Figure 14-6. Schematic view of three kinds of field-effect transistors (FET) (a) metal-insulator-semiconductor FET (MISFET), (b) metal-semiconductor FET (MESFET), (c) thin-film transistor (TFT). Figure 14-6. Schematic view of three kinds of field-effect transistors (FET) (a) metal-insulator-semiconductor FET (MISFET), (b) metal-semiconductor FET (MESFET), (c) thin-film transistor (TFT).
Different types of SiC Field Effect Transistors, Metal Oxide Semiconductor Transistors (MOSFETs), Metal Semiconductor Field Effect Transistors (MESFETs), and Junction Field Effect Transistors (JFETs) compete for future applications in high temperature and harsh environment electronics. This Datareview details these various types of FETs, the structures used and the performances obtained. Interesting recent developments and potential applications, such as FET integrated circuits, a hybrid operational amplifier and an inverter circuit are also outlined. [Pg.247]


See other pages where Semiconductor FET MESFET is mentioned: [Pg.249]    [Pg.372]    [Pg.472]    [Pg.475]    [Pg.832]    [Pg.249]    [Pg.372]    [Pg.472]    [Pg.475]    [Pg.832]    [Pg.572]    [Pg.403]    [Pg.563]    [Pg.569]    [Pg.570]    [Pg.544]    [Pg.283]    [Pg.477]    [Pg.264]    [Pg.432]   


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