Schottky barrier current-voltage measurements

Schottky Diode Growth. The electrical properties of the films deposited using SSP 1 (Fig. 6.13) were evaluated by current versus voltage (I-V) measurements recorded for the thin films using thermally evaporated aluminum contacts (10mm2), to make Schottky barrier diodes (see Fig. 6.14). 

Figure 7.31 demonstrates the very good rectifying behavior of such a Pd Schottky diode on undoped ZnO thin film. The current density ratio determined for bias voltages of +0.6 V and -3V is about 104 as shown in the inset of Fig. 7.31. The ideality factor n is about 1.5. The temperature-dependent current-voltage (IV, see Fig. 7.31) and capacitance-voltage (CV) measurements from 210 to 300 K explain the reason for the slight deviation of the ideality factor from unity and the dependence of the reverse current on the reverse bias. The barrier heights of the diode of Fig. 7.31 jy and

It is possible that the steep, steady-state current-voltage (/-F) curves frequently observed with PbNe and other azides prior to detonation are reverse currents at Schottky barriers, dominated by interface states. They do not appear to be single-injection currents because the same electrode that causes the steep, steady-state j-V dependences fails to produce the characteristic transient /-F-r dependences expected from the single-injection mechanism [21,22]. The reverse-bias current mechanism is also consistent with temperature-dependence measurements reported on AgNa [17] and with electrode material-dependence measurements reported on TIN3 and CuN [18]. It is essential to settle this point before one can use such measurements to establish initiation mechanisms. 

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