Scanning electron microscopy resist

Scanning electron microscopy confirmed sub-0.5p.m resolution capabilities in TBSS -acid generator resist films (Figure 3). Note that the edge profiles are nearly vertical. Preliminary results indicate that the plasma etching resistance is satisfactory for semiconductor device processing. 

Three series of LaCoi. CuxOs, LaMni.xCuxOs, LaFei x(Cu, Pd)x03 perovskites prepared by reactive grinding were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature programmed desorption (TPD) of O2, NO + O2, and CsHg in the absence or presence of H2O, Fourier transform infrared (FTIR) spectroscopy as well as activity evaluations without or with 10% steam in the feed. This research was carried out with the objective to investigate the water vapor effect on the catalytic behavior of the tested perovskites. An attempt to propose a steam deactivation mechanism and to correlate the water resistance of perovskites with their properties has also been done. 

The developed resist patterns were heated at 200°C for 1 hour in a convection oven. Scanning electron microscopy shows no thermal deformation in the negative tone images (Figure 10). The positive tone images lost thickness consistent with thermolysis of the t-BOC side chain but also do not show evidence of thermal flow deformation. 

Scanning Electron Microscopy All pumice treated copper surface morphology were examined under a scanning electron microscope equipped with an x-ray analyzer. The electron microscope was Model JSM 8 0 supplied by JEOL Limited, Tokyo, Japan and the x-ray analyzer was Model TN-3300 manufactured by Tracer Northern, Middleton, Wisconsin. This technique was used extensively at many stages of the printed circuit fabrication, especially at the point right after resist lamination and development. 

The electrical properties of the films were determined on aluminium/insu-lator/gold (MIM) structures. The capacitance was measured with a LCR Meter (Agilent 4284 A) at a frequency of 1 kHz. The specific resistance and the breakdown field strength were measured using a Source-Measure-Unit (SMU, Keithley 6430). The film thickness was determined by scanning electron microscopy (SEM). 

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