Reverse breakdown voltage

BV Diode reverse breakdown voltage. Used to set the diode breakdown voltage in rectifier diodes, and the Zener breakdown voltage in Zener diodes. volt oo... 

Ref [8] shows the dependence of the reverse breakdown voltage of 6H-SiC and depletion width on the background carrier concentration measured in n-type layers. The dependence of the breakdown voltage on the carrier concentration is approximately linear on a log-log... 

Ghezzo et al [13] reported on ion implanted planar p-n junction 6H-SiC diodes fabricated by ion implantation of B into n-type SiC with the donor concentration of 9x 1015cm 3. The implantation was performed at 25 °C and 1000°C followed by a 1300°C post-implant furnace anneal. The diodes had an ideality factor of 1.77 at room temperature, the reverse leakage current of 1 O 10 A cm 2 at -10 V and the reverse breakdown voltage of -650 V. 

FIGURE 4 Measured dependence of the reverse breakdown voltage and maximum electric field on background... 

Reverse Breakdown Voltage Maximum reverse biased voltage that can be applied to the diode without it conducting electrical current, sometimes just called the breakdown voltage. 

A Zener diode is a silicon junction diode but with a different characteristic than the semiconductor diode considered previously. It is a special diode with a predetermined reverse breakdown voltage, the mechanism for which was discovered by Carl Zener in 1934. Its symbol and general appearance are shown... 

For moderate reverse bias voltages, no current flows. If the voltage is sufficiently negative, breakdown occurs and current flows in the reverse direction. 

Avalanche Photodiode (APD)—A photodiode designed to take advantage of avalanche multiplication of photocurrent. As the reverse-bias voltage approaches the breakdown voltage, hole-electron pairs created by absorbed photons acquire sufficient energy to create additional hole electron pairs when they collide with ions thus a multiplication or signal gain is achieved. 

At the junction there is a repulsion of majority carrier (electrons in the n-type and holes in p-type) so that a depleted region exists. An applied reverse bias widens this depleted region which is the sensitive detector volume, and can be extended to the limit of breakdown voltage. Detectors are generally available with depletion depths of 100 and 1000 pm, with the cost approximately proportional to the depletion depth. 

Although only the impurities in the scr can be detected by DLTS, it is always possible to increase the reverse-bias voltage to increase the scr width. It is difficult, however, to pulse to high voltages. Therefore, the width is ultimately limited by voltage breakdown considerations. Then, one can etch the wafer repeatedly, form Schottky barrier devices each time and measure to profile the N concentration. 

Zener diode - A control device utilizing a p-n junction with a well defined reverse-bias avalanche breakdown voltage. 

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