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Resonant tunneling diode structures

Fig. 34. Schematic valence band diagram of resonant tunneling diode structures, simplified diagram of energy versus wave vector parallel to the interface, and resulting /-V curve by spin-splitting of the valence band of... Fig. 34. Schematic valence band diagram of resonant tunneling diode structures, simplified diagram of energy versus wave vector parallel to the interface, and resulting /-V curve by spin-splitting of the valence band of...
Fig. 8. (a) Structure of a typical resonant tunneling diode (RTD) (b) conduction band diagram for the barrier stmcture where (-------) represents the... [Pg.375]

The proposed technique seems to be rather promising for the formation of electronic devices of extremely small sizes. In fact, its resolution is about 0.5-0.8 nm, which is comparable to that of molecular beam epitaxy. However, molecular beam epitaxy is a complicated and expensive technique. All the processes are carried out at 10 vacuum and repair extrapure materials. In the proposed technique, the layers are synthesized at normal conditions and, therefore, it is much less expansive. The presented results had demonstrated the possibility of the formation of superlattices with this technique. The next step will be the fabrication of devices based on these superlattices. To begin with, two types of devices wiU be focused on. The first will be a resonant tunneling diode. In this case the quantum weU will be surrounded by two quantum barriers. In the case of symmetrical structure, the resonant... [Pg.189]

Quantum effects, such as resonant tunneling, enhanced carrier mobility (two-dimensional electron gas), bound states in the optical absorption spectrum, and nonlinear optical effects (e.g., intensity-dependent refractive indices) have been observed in semiconductor multiple quantum wells (2-4), Examples of devices based on these structures include tunnel diodes, fast optical and optoelectronic switches, high electron mobility transistors, and quantum well lasers. [Pg.246]

Using these two methods nanoscale circuits, consisting of conductors, semiconductors and isolating areas, can be obtained. Elements such as tunnel resonant diodes and single electron transistors can be the structural elements of such circuits, analogous to devices described in the literature [50]. [Pg.203]


See other pages where Resonant tunneling diode structures is mentioned: [Pg.375]    [Pg.68]    [Pg.249]    [Pg.3585]    [Pg.3355]    [Pg.2]    [Pg.73]   


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