Resonance Tunneling Diodes

Fig. 8. (a) Structure of a typical resonant tunneling diode (RTD) (b) conduction band diagram for the barrier stmcture where (-------) represents the... 

The proposed technique seems to be rather promising for the formation of electronic devices of extremely small sizes. In fact, its resolution is about 0.5-0.8 nm, which is comparable to that of molecular beam epitaxy. However, molecular beam epitaxy is a complicated and expensive technique. All the processes are carried out at 10 vacuum and repair extrapure materials. In the proposed technique, the layers are synthesized at normal conditions and, therefore, it is much less expansive. The presented results had demonstrated the possibility of the formation of superlattices with this technique. The next step will be the fabrication of devices based on these superlattices. To begin with, two types of devices wiU be focused on. The first will be a resonant tunneling diode. In this case the quantum weU will be surrounded by two quantum barriers. In the case of symmetrical structure, the resonant... 

A. Rawlett, J. Chen, M. A Reed, J. M. Tom, Advances in Molecular Scale Electronics Synthesis and Testing of Molecular Scale Resonant Tunneling Diodes and Molecular Scale Controllers, Polym. Mater, Sci. Engin (Am Chem Soc, Div. Polym Mater) 1999, 81,140-141. 

Fig. 34. Schematic valence band diagram of resonant tunneling diode structures, simplified diagram of energy versus wave vector parallel to the interface, and resulting /-V curve by spin-splitting of the valence band of...

Fig. 35. Temperature dependence of the differential conductance d//dV versus bias voltage V of a resonant tunneling diode with a (Ga,Mn)As emitter. No magnetic held is applied (Ohno et al. 1998). (b) Calculated resonant tunneling spectra as a function of the exchange energy NqP (Akiba et al. 2000b).

Fig. 1. The band diagram of Ini.xGaxAs /GaSbyAsi.y interband resonant tunneling diode...

B. Gelmont, D. Woolard, W. Zhang and T. Globus, Electron Transport within Resonant Tunneling Diodes with Staggered-Bandgap Heterostmctures, Solid State Electronics 46, 1513-1518 (2002). 

D. Woolard, W. Zhang, and B. Gelmont, A Novel Interband-Resonant-Tunneling-Diode (I-RTD) Based High-Frequency Oscillator, Solid Slate Electronics 49, 257-266 (2005). 

Chaos control of spatio-temporal oscillations in resonant tunneling diodes. . 158... 

J. Unkelbach, A. Amann, W. Just, and E. Scholl Time-delay autosynchronization of the spatio-temporal dynamics in resonant tunneling diodes, Phys. Rev. E 68, 026204 (2003). 

G. Stegemann, A. G. Balanov, and E. Scholl Delayed feedback control of stochastic spatiotemporal dynamics in a resonant tunneling diode, Phys. Rev. E 73, 16203 (2006). 

E. Scholl, A. Amann, M. Rudolf, and J. Unkelbach Transverse spatio-temporal instabilities in the double barrier resonant tunneling diode, Phys-ica B 314, 113 (2002). 

We have demonstrated electrografting of a short alkyl-chain i.e. octyltrichlorosilane (OTS) and a new o-jt molecular rectifier i.e. 5-(4-undecenyloxyphenyl)-10,15,20-triphenylporphyrin(2) (TPP-C11) monolayers on hydrated Si (111) surfaces at room temperature. These results demonstrate that electrografting can be utilized for the development of other molecular devices, such as rectifiers, resonant tunnel diodes, transistors etc. 

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