Double-barrier resonant tunneling

THE EQUIVALENT CIRCUIT OF SPIN-DEPENDANT TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING... 

Localization of energy exchanges in field-assisted double-barrier resonant tunneling... 

Localization of Energy Exchanges in Field-Assisted Double-Barrier Resonant Tunneling 181... 

E. Scholl, A. Amann, M. Rudolf, and J. Unkelbach Transverse spatio-temporal instabilities in the double barrier resonant tunneling diode, Phys-ica B 314, 113 (2002). 

As another example, we consider a double-barrier resonant tunneling system in ID. These artificial quantum systems, formed of semiconductor materials, have been fabricated and studied since the 1970s of last century [61]. Sakaki and co-workers verified experimentally that electrons in sufficiently thin symmetric double-barrier resonant structures exhibit exponential decay [88]. Recent work has examined the conditions for full nonexponential decay in double-barrier resonant systems [56]. Here we want to exemplify the time evolution of the probability density in these systems along the external region using the resonant expansion given by Eq. (121) [89]. 

It is thus desirable to examine the resonant tunneling in a Luttinger liquid in a broad range of temperature down to T = 0 and for various parameters of the barriers. Our purpose in this paper is to analyze transport through a double barrier of arbitrary strength, strong or weak, symmetric or asymmetric, within a general analytical method applicable to all these situations. 

Fig. 9.27. Current-voltage characteristics of a double barrier structure with well thickness of 40 A, showing the resonant tunneling features. The predicted voltages of the peaks are indicated (Miyazaki ei at. 1987).

Fig. 9.5 A double barrier model of resonance tunneling. Starting from state 0) on the left, our problem is to compute the fluxes into the continua L and R, defined in terms of basis states that are restricted to the left and right sides ofthe barrier, respectively. Below the barrier energy such states can be taken as eigenstates of a particle moving in the potentials (a) and (b) respectively, which are shown on the right. The basis is supplemented by state 11), taken as the bound eigenstate of a particle in the potential (c)...

We end with a word about possible inferences for an experimental study of field-assisted resonant tunneling. We have observed that essentially the same conclusions can be drawn if the double-barrier potential is affected by a bias field. The discussion is therefore applicable to situations similar to those mentioned in the Introduction, 7]. If the quanta are phonons or plasmons with different frequencies for the various interfaces in the sample, only the frequencies characteristic of the most external discontinuities should be involved. 

D. Z.-Y. Ting, E. T. Yu and T. C. McGill, Effect of band mixing on hole-tunneling times in GaAs/AlAs double-barrier heterostructures, Phys. Rev. B 45 3583 (1992) W. R. Frensley, Numerical evaluation of resonant states. Supperlatt. Microstr. 11 347 (1992). 

H. Yamamoto, Appl. Phys. A, 42, 245-248 (1987). Resonant Tunneling Condition and Transmission Coefficient in a Symmetrical One-Dimensional Rectangular Double-Barrier System. 

---