Resolution cross-linking negative resists

Two types of resists are used negative and positive resists. Negative resists have a chemically inert polymer component, such as mbber, and a photoreactive agent that reacts with light to form cross-links in the mbber. When placed in an oiganic developer solvent, the unexposed, unpolymerized resist dissolves, leaving a polymeric pattern in the exposed regions. Because the polymer swells in the solvent, the resolution is limited to two to three times... 

When some or all of the phenyl rings are substituted with halogen (Scheme 6.11), the radiation sensitivity and the cross-linking efficiency of polystyrene can be enhanced significantly. Negative electron-beam resist formulated from iodi-nated and chlorinated polystyrene and based on this approach have been reported. Sensitivity of about 2 p.C/cm and resolution of about 1-p.m features have been demonstrated with these materials. ... 

A comparative study of polystyrene (PS) with bis(perfluorophenyl) azides 1-2 and the corresponding non-fluorinated bisazides 3-4 as deep-UV resists is reported. Inclusion of as low as 1.2 wt-% of 1 in PS led to 70% retention of thickness after photolysis and development. PS containing 2.4 wt-% of 1 is > 100 times more sensitive as a deep-UV negative resist than PS itself. The presence of 1 in PS also increased the contrast of the resist. On a molar basis, 1 was about 10 times as effective as non-fluorinated bisazide 3 in cross-linking PS while 2 was about 6 times as effective as 4. PS containing 2.4 wt-% of 1 was found to have a deep-UV sensitivity of 5-10 mJ cm and resolution of about 0.5 /tm. 

---