Resists photolithography

Registiy of Mass Spectral Data, 412 Replication (DNA). 1106-1107 direction of, 1107 error rate during. 1107 lagging strand in, 1107 leading strand in, 1107 Okazaki fragments in, 1107 replication fork in, 1107 Replication fork (DNA), 1107 Reserpine, structure of, 65 Residue (protein), 1027 Resist, photolithography and, 505-506... 

Phosphine(s), chirality of, 314 Phosphite, DNA synthesis and, 1115 oxidation of, 1116 Phospholipid, 1066-1067 classification of, 1066 Phosphopantetheine, coenzyme A from. 817 structure of, 1127 Phosphoramidite, DNA synthesis and, 1115 Phosphoranc, 720 Phosphoric acid, pKa of, 51 Phosphoric acid anhydride, 1127 Phosphorus, hybridization of, 20 Phosphorus oxychloride, alcohol dehydration with. 620-622 Phosphorus tribromide, reaction with alcohols. 344. 618 Photochemical reaction, 1181 Photolithography, 505-506 resists for, 505-506 Photon, 419 energy- of. 420 Photosynthesis, 973-974 Phthalic acid, structure of, 753 Phthalimide, Gabriel amine synthesis and, 929... 

Chemical vapor deposition Plasma etching Photoresist Photolithography Resistance heating Ion implantation Spin-on glass deposition Cathodic arc Ion plating... 

TES are based on the steep temperature dependence of the resistance of superconducting metallic films. The useful temperature range is very narrow. These thermometers which may have a very low intrinsic noise, are fabricated by a vacuum deposition process at very low pressure and are patterned either by photolithography technique (see e.g. ref. [21]) or by micromechanical machining (see e.g. ref. [22]). The dimensionless parameter a = T/R-dR/dT defines the DC quality of a sensor. TES with a as high as 1000 have been built [23],... 

Fig. 4.3. SEM micrograph of image-reversal resist stripes of a test pattern after photolithography. The resist shows an rmdercut profile as desired for the lift-off process...

The basic concepts employed in early photolithography, both in materials and processing, have been extrapolated to modern lithographic technologies including x-ray and electron beam. In the remainder of this book we will discuss in detail the fundamental principles of chemistry and physics as they apply to the design and use of resist materials. 

After consideration of all factors which limit resolution such as exposure hardware, resist systems, registration, alignment, and linewidth control, there is a general consensus that the useful resolution limit of photolithography may lie somewhere between 0.4 and 0.8 /im and depends on such factors as the implementation of short wavelength UV and the ability to accurately place images from a projection tool onto a silicon wafer. 

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