Relative depth intensity

The relative depth intensity Jn,h=i for a depth h of 1 mm as function of position in -direction increases with increasing width o of perforations which is independent on the period i between the perforations (Figs. 9.51 and 9.52). 

Two types of maxima are visible in Fig. 9.51. Local maxima of the relative depth intensity Jn,h=i of higher order can be foimd between the main maxima at 53, 73 and 93 pm. The main maxima are higher and narrower as compared to the different local maxima aroimd 63 and 83 pm. The main maxima can be assigned to the transparent perforations of the mask. The appearance of the local maxima is due to diffraction effects. They are smaller if a larger period i = 40 pm is used (see Fig. 9.52) as compared to relative depth intensity Jn,h=i... 

Fig. 9.51. Relative depth intensity J h=i for width o of perforations as function of the distance along the x-coordinate at a constant period i = 20 pm [190]...

Since the nuclear and electronic scattering cross sections for alpha particles are well known, the relative concentrations of the elements and their depth profiles can be easily obtained. The relative element concentrations are determined by the relative scattering intensities. The depth profile is obtained from the energy spread of the scattered particles, which lose energy before and after the nuclear collision, by inelastic scattering with electrons. The knowledge of the elements areal density and of the film thickness allows the determination of film density. 

In order to produce surface-relief electro-optic gratings, Munakata et compared two fabrication methods of SRG inscription. In the first, the SRG was produced with an interference pattern of cw laser, with relatively modest intensities. The gratings so recorded were photo- and thermally erasable, and efficient writing was polarization dependent. In the second method, a phase mask was employed to provide the periodic intensity modulation of a pulsed laser, the 3rd-order harmonic (at 355 nm) of a Nd YAG laser. The SRG was produced with a single laser pulse, allowing a very short fabrication time (less than Is). The direshold for ablation was 500 mj/(em pulse), and the amplitude of the SRG increased with pulse energy. A depth of up to 300 rim could be achieved, leading to a smooth but not sinusoidal surface modulation. 

The attainable photocurrent under a given illumination intensity depends on the relative depth of light penetration in the semiconductor, the diffusion length of the... 

The combination of uv and x-ray spectroscopies enabled us to vary the probe depth of the measurements via the electron mean-free-path. It also made it possible to identify the orbital character of the empty state structures through variations in their relative emission intensities (2JL) ... 

From this equation, the influence of UVA concentration and relative light intensity as a function of depth for a nonabsorbing polymer is calculated (see Fig. 17.1). From this figure, it is clear that UVAs mainly protect the bulk of the material. They are not very effective in preventing surface degradation. For absorbing polymers or when pigments are added, the influence of a UVA will be even smaller [14]. 

Relative element intensities (Ir, Ti, Cl) were calculated from peak surface ratio measurements, corrected by differences in escape depths (a root square approximation was used) and in cross section (using Scofield s data [11]). For the Ir 4f lines, the curve fitting is shown in Fig. 1 and the quantitative results of the sample is reported in the Table 1. 

Figure 17.3.11 AES depth profiles for GaAs anodized in H3PO4 solutions. Ordinate has been corrected for relative Auger intensities and differential sputtering rates. Abscissa is sputtering time. Thickness scales are approximate. Roman numerals indicate different compositional regions in the oxide layer. Bulk GaAs is at rightmost limit, (a) From electrochemical treatment only.

ToFSIMS is highly surface sensitive where, in the static legiffle, the sampling depth is < 5 nanometres. ToFSIMS is generally more sensitive than XPS but it is not quantitative. Its chemical specificity, however, may be exploited in a semi-quantitative manner where variations in the surface concentrations of different chemical species may be followed by monitoring changes in relative signal intensities. 

Figure la AES depth profiles In the surface of test specimens (AISI 52100 steel) shipment I. The units on the abscissa Is sputtertime in minutes (1 min. Is approx 0.4 nm). The units on the ordinate Is the relative Auger Intensity. Values for sulphur and chlorine are multiplied by 5. 

Although the relative band intensities of ATR spectra that have been subjected to the ATR correction are similar to those of the corresponding spectra measured in transmission, they are not the same because of the effect of anomalous dispersion (i.e., the variation of refractive index across an absorption band see Section 1.5.2). Let the refractive index, 2, of the optically rare material (the sample ) in spectral regions where there is no absorption be ave. Because 2 is smaller than Wave at higher wavenumbers than the band center, Vq (see, e.g.. Figure 13.19), the depth of penetration will be less than the value calculated by Eq. 15.4 when ave... 

We will compare the relative total intensity with the depth of real geometrical structures. Figure 9.49 shows the observed depth as function of the raster geometry of the mask. The observed depth of a geometrical structure increases progressively with increased width of perforations, if the period i is constant. The structural depth decreases noticeably at small widths of perforation. However, the observed depth does not remain constant if the period i varies at a constant transmission ratio (i.e. o/i = const.). The area dependent definition of the ratio of transmission does not allow it. If only the transmission controls the UV-penetration depth, it would be expected that the observed structural depth is constant for a constant ratio of transmission which corresponds to a constant relative total intensity. 

The depth related relative total intensity Jnges/h depends on the raster geometry of the mask as shown in Fig. 9.50. Decreasing the width o of transparent perforations at a constant period i leads to a significant increase of the depth related relative total intensity, which cannot be explained by the transmission control of the depth. 

Fig. 9.50. Depth related relative total intensity Jnsee/h as function of the raster geometry of mask (period i width o of the perforations) [190]...

Jnges/ Depth related, relative total intensity mm ... 

One of the main parameters of a resonance curve is its position on the velocity axis. In Figure 8.5a, a resonance curve is presented schematically when the emitter and absorber are one and the same motionless substance the maximum of absorption falls on the zero value of relative velocity. Intensity of absorption (depth of curve minimum) is proportional to the probability of the resonance absorption, / So, such measurements enable the measurement of a change in the atomic mobility in a sample under different treatments... 

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