Processing Porous SiC Diffusion, Oxidation, Contact Formation

Processing Porous SiC Diffusion, Oxidation, Contact Formation 

1GE Global Research Center, Niskayuna, NY 12309, USA 2 University of South Carolina, Columbia, SC 29208, USA 

Porous SiC material, to be used for various device applications, requires additional processing steps which are common for the fabrication of electronic devices. These steps include cleaning, etching, doping, oxidation, metallization, film deposition, annealing, etc. Such treatments of the porous layer can modify the properties of the porous layer and, moreover, the kinetics of the processes in porous material might be different from similar processes in nonporous substrates of the same material. 

In this chapter we will summarize our initial research efforts covering some key processing steps in device technology such as doping via diffusion, thermal oxidation and contact deposition with respect to porous SiC. In addition, working on preparation of porous SiC samples we found significant variations in pore morphology as a function of 

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd 

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