Previous Work on Electrical Switching in Amorphous Silicon

Previous Work on Electrical Switching in Amorphous Silicon 

The work of Feldman and his colleagues, which originated in the early 

It should be noted that both Feldman et al. and Dey and Fong used a-Si films deposited by vacuum evaporation. This probably accounts for the relatively low OFF-state resistances which they both found (100-100 k 2). It is now well established that vacuum-evaporated a-Si is a very different material from the hydrogenated form of a-Si obtained, for example, by the carefully controlled glow-discharge decomposition of silane (e.g., Spear, 1977). 

Three papers concerned specifically with switching in hydrogenated amorphous silicon by Gabriel and Adler (1982), den Boer (1982), and Owen et al. (1982) appeared almost concurrently early in 1982, each reporting very different effects observed in different a-Si structures. Our own work (Owen et al., 1982), including recent results, is described in detail in the following sections. 

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II. Previous Work on Electrical Switching in Amorphous Silicon... 

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