Precursor for chemical vapor deposition

Cowen, J. E. Riga, A. T. Hepp, A. F. Duraj, S. A. Banger, K. K. McClarnon, R. 2004. Synthesis and characterization of CuInS2 single source precursors for chemical vapor deposition. J. Therm. Analysis and Color. 75 929-936. 

GROUP 2 ELEMENT PRECURSORS FOR CHEMICAL VAPOR DEPOSITION 191... 

A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition... 

Group 2 compounds as precursors for chemical vapor deposition, 218-219, 223-224, 327-328... 

Wojtczak, William A., Fleig, Patrick F., and Hampden-Smith, Mark J., A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition. 40 215... 

R. Kumar, A. W. Maverick, E. R. Fronczek, G. Lai and G. L. Griffin, Precursors for Chemical Vapor Deposition of Copper, 20H American Chemical Society Meeting, Atlanta, April 1991, Abstract 1NOR256. 

The commercial applications of the organometallic species are typically in the area of catalysis (see Chapters 33 and 34) and preparation of precursors for chemical vapor deposition [201]. An example of the synthetic usefulness of Grignard reagents is demonstrated in the preparation of the new breed of metallocene catalyst that are used for polyolefin production (Scheme 7) [106,202,203]. 

Zinc and cadmium dialkyldithiophosphinates, M(S2PR2)2 (M = Zn, Cd R = Bu1),67 and their phenanthroline and bipyridyl adducts,68 which are of interest as precursors for chemical vapor deposition (CYD) of metal sulfide films, have been prepared and structurally characterized. 

Homoleptic amido species M(NR2)s have been used as precursors for chemical vapor deposition of metal-nitride thin films. For example, Ta(NMe2)s and NH3 afforded Ta3N5 thin films with low carbon contamination at temperatures between 200 °C and 400 °C.85... 

Tin(II) f-butoxide, [(Sn(O-Bu02)2l, as well as the corresponding heterometal alkoxides [M Sn(0-BuOsjz] (M = Ca, Sr, Ba), have been employed as precursors for chemical vapor deposition processes, generating either Sn02 or MSnOs (M = Ca, Sr, Ba). ... 

Transition metal carbonyl is important in laser chemistry as sources of metal atoms or as precursors for chemical vapor deposition (CVD) [104]. Ni(CO)4 shows a typical photofragmentation reaction initiated by the XeCl laser (308 nm, 4.03 eV), and the knowledge on the mechanism is valuable for the design and control of the laser-induced CVD. The SAC-Cl method was applied to the excitation spectrum and the potential energy curves relevant to the photofragmentation reaction [105]. 

Tumipseed, S. B., Barkley, R. M., and Sievers, R. E., Synthesis and characterization of alkaline-earth-metal P-diketonate complexes used as precursors for chemical vapor deposition of thin-film superconductors, Inorg. Chem., 30, 1164 (1991). 

Aminosilanes are valuable compounds in modem silicon chemistry, not only as alternative precursors for chemical vapor deposition of Si3N4, but also because of their many interesting chemical features. The amino groups can be easily attached to silicon by the reaction of halosilanes with amines or alkali metal amides using standard literature procedures [I ]. 

These adducts are easily prepared upon addition of the Lewis base to the bis(dithiocarbamate) complex, which in many cases leads to disruption of the bi-or polynuclear structures found in the solid state (see above). In this context, this area of chemistry has interest in providing more suitable precursors for chemical vapor deposition studies (see Section IV.I.h.i). 

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