Porous silicon dissolution valence

Deviation of 60 mV/decade can be seen in Table 5.3 under different conditions. In addition to the potential distribution in the two double layers, there are two other possible causes for the deviations. The first is possible potential drops in other parts of the electrical circuit, e.g., in the electrolyte and semiconductor. The second possibility is the change of effective surface area due to the formation of a porous silicon layer during the course of i-V curve measurement. In addition, if the reaction is controlled by a process involving the Helmholtz layer, the apparent Tafel slope may be smaller than the 60 mV/decade as would be expected from the formula, B = kTI23anq, because the effective dissolution valence n is not a constant with respect to potential but varies from 2 to 3 in the exponential region. 

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