PN junction diode

The samples were pn junction diodes formed on an SOI wafer fabricated by wafer bonding technique. The thicknesses of the n-type top Si layer with resistivity of 2-4 fl cm, the oxide layer, and the n-type Si substrate with resistivity of 1-50 H cm are 5.7, 0.48, and 630 pm, respectively. The p region, which is 50 pm in diameter and 0.5 pm in depth, was... 

Figure 17 Transient current induced in SOI pn junction diode by 15-MeV C-ion irradiation (solid line). The result obtained for bulk Si pn diode is also shown as a dotted line in the figure for comparison. The reverse bias of 10 V was applied to pn diodes during measurements.

The first pn junction diode or rectifier was reported in 1949 [13]. The term "diode" comes from the vacuum-tube literature, and the new device was called a rectifier when it was used in electrical rectifier circuits. However, the term "diode" should be reserved to vacuum-tube devices, and "rectifiers" should be used for semiconductor pn junction devices. 

Semiconducting pn junction diode lasers work at the pn junction interface, and typically have a large angular spread (Fig. 10.16). 

K. C. Aw, N. T. Salim, H. Peng, L. Zhang, J. Travas-Sejdic, and W. Gao, PN-junction diode behavior based on polyaniline nanotuhes field effect transistor, J. Mater. Sci.- Mater. Electron., 19, 996-999 (2008). 

Fig. 9.9 Illustration of a self-biased photoelectrochemical pn-junction diode (a) and the corresponding photocurrent produced from the device (b). Reproduced with permission from [47], Copyright 2008 Americal Chemical Society.

Drilling bits for hardened steel pn-junction diodes and transistors Optical protectors... 

FIGURE 2-15 A pn-junction diode, (a) Physical appearance of one type formed by diffusion of a p-type impurity into an /i-type semiconductor, (b) symbol for a diode, (c) current under forward bias, (d) resistance to current under reverse bias. 

Figure 55 Rectification characteristics of a cBN pn-junction diode. [T. Tomikawa, private communication the diodes were described in his patent (347).]...

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