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Photoluminescence time-dependent

In photoluminescence one measures physical and chemical properties of materials by using photons to induce excited electronic states in the material system and analyzing the optical emission as these states relax. Typically, light is directed onto the sample for excitation, and the emitted luminescence is collected by a lens and passed through an optical spectrometer onto a photodetector. The spectral distribution and time dependence of the emission are related to electronic transition probabilities within the sample, and can be used to provide qualitative and, sometimes, quantitative information about chemical composition, structure (bonding, disorder, interfaces, quantum wells), impurities, kinetic processes, and energy transfer. [Pg.29]

Experimentally, it is necessary to distinguish the effects of IL-CT mixing from simultaneous population of both the 3IL and 3CT states that could be in fast thermal equilibrium. (Note that an energy difference of 0.5 eV would amount to ca. 5% population of the upper state at room temperature.) Simultaneous population of these two states can be observed in TRIR spectra, where the predominantly 3IL state is manifested by a weak band occurring below the ground-state A" +A (2) band while the lower-lying predominantly 3CT state shows the characteristic pattern of three up-shifted bands. This is, for example the case of [Re(Etpy)(CO)3(4,4 -(NH2)2-bpy)]+ [47] and [Re(py)(CO)3(dppz)]+ [48], Time-dependent simultaneous population of 3IL and 3MLCT states was detected by TRIR for [Re(Et)(CO)3(bpy)]+ in ionic liquids until a few hundreds of ps after excitation [76] and by photoluminescence upconversion for [Re(L)(CO)3(bpy)]B (L = Etpy, halide) in MeCN on a femtosecond timescale [10],... [Pg.93]

Suitable molecules covering the range of interest were investigated by measuring the emission and excitation spectra of the steady-state photoluminescence and of its phosphorescence component (at a fixed time delay after excitation with a pulsed light source) as well as the time dependence of the phosphorescence in the time regime above ca. 5 ps. [Pg.506]

While the measurements of the photoluminescence intensity under steady-state excitation as discussed above did not reveal a convincing systematic effect from the cyclosiloxane ring size, it was possible to achieve a classification of the emission characteristies from the phosphorescence excitation measurements. In this experiment, the emission intensity is recorded after a fixed delay time (A/ = 50 ps was selected) at a fixed emission wavelength (505 nm) as a function of the excitation wavelength. Measurements of the time dependence of this emission were also made at a fixed excitation wavelength Txc = 320 nm, and for two select emission wavelengths of = 380 nm and Ams = 458 nm. [Pg.514]

The simulation of UV-visible absorption and emission (photoluminescence) speetra requires ealeulation of excited state properties, as also is the case for simulation of RR speetra and chiroptical methods such as CD and MCD. Time-dependent DFT (TD-DFT) is now the most widely used method in inorganie systems for the computation of vertical excitation energies (i.e. obtained at the ground state geometry) and oscillator strengths, from whieh eleetronie absorption spectra are simulated. The simulation of photolumineseenee spectra requires optimization of the... [Pg.231]

In addition to the radiative processes, there are nonradiative processes in semiconductors because of imperfections that act as nonradiative centers. We should mention some defects as radiative recombination centers, which in a photoluminescence experiment can shed light on the energy levels of defect states. For a semiconductor containing nonradiative traps or recombination centers, in an experiment such as time-dependent PL, the decay in the integrated PL intensity versus temperature is related to the low-temperature integrated PL intensity as... [Pg.152]

Time-resolved measurements of photogenerated (very intense illumination, up to 0.56 GW/cm ) electron/hole recombination on CD (selenosulphate/NTA bath) CdSe of different crystal sizes has shown that the trapping of electrons, probably in surface states, occurs in ca. 0.5 ps, and a combination of (intensity-dependent) Auger recombination and shallow-trapped recombination occurs in a time frame of ca. 50 ps. A much slower (not measured) decay due to deeply trapped charges also occurred [102]. A different time-resolved photoluminescence study on similar films attributed emission to recombination from localized states [103]. In particular, the large difference in luminescence efficiency and lifetime between samples annealed in air and in vacuum evidenced the surface nature of these states. [Pg.179]

Figure 19.19 Left side Variation of the photoluminescence intensity E (b) of the PEG-functionalized Au and CdTe nanoparticles depending on the temperature (a) (c) shows the calculated photon-field enhancement factor P of the CdTe nanoparticles as a function of time. Right side Schematic representation of a dynamic nanothermometer based on a nanoparticle superstructure. This superstructure consists of two types of nanoparticles (gold and CdTe) connected by polymeric spacers.118 (Reprinted with permission from J. Lee et al., Angew. Chem. Int. Ed., 2005, 44, 7439-7442. Copyright Wiley-VCH Verlag GmbH Co. KGaA.)... Figure 19.19 Left side Variation of the photoluminescence intensity E (b) of the PEG-functionalized Au and CdTe nanoparticles depending on the temperature (a) (c) shows the calculated photon-field enhancement factor P of the CdTe nanoparticles as a function of time. Right side Schematic representation of a dynamic nanothermometer based on a nanoparticle superstructure. This superstructure consists of two types of nanoparticles (gold and CdTe) connected by polymeric spacers.118 (Reprinted with permission from J. Lee et al., Angew. Chem. Int. Ed., 2005, 44, 7439-7442. Copyright Wiley-VCH Verlag GmbH Co. KGaA.)...
Currently silicon is still one of the most important semiconductors as it is the basis of any computer chip. It exhibits an indirect band gap of 1.1 eV at room temperature in the microcrystalline phase. Similar to Ge, silicon nanoparticles show a size-dependent photoluminescence. It was reported by Katayama el al. that a thin Si layer can be electrodeposited in l-ethyl-3-methylimidazolium hexafluorosilicate at 90 °C [44], However, upon exposure to air the deposit reacted completely to SiC>2, which makes it difficult to decide whether the deposit was semiconducting or not. Recently, we showed for the first time that silicon can be well electrodeposited from SiCU in the air and water stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([BMPJTfiN) [45, 46]. This ionic liquid can be... [Pg.155]


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