Photoelectrochemical Properties of Oxide Layers

Topics to be discussed next relate to photoelectrochemistry that deals with a wide range of problems concerning the electrochemical current arising from the light perturbation. Fundamentals of this important field of electrochemical science can be found in special literature. Here we did not pursue goals to perform exhaustive investigations of photoelectrochemical phenomena and, for the most part, we restrict ourselves by common presentation of our observations. 

When a metal is intimately brought into contact with a semiconductor, the so-called Schottky barrier is formed. The potential distribution across this barrier is of specific character. The main region over which the potential changes is within the semiconductor itself, often extending over many nanometers. The important point is that as the bias on the semiconductor is altered, the change in potential is also entirely accommodated within this depletion. 

We have already mentioned that the photoelectrochemical properties of oxide layers depend strongly on the conditions under which they are formed. When CU2O develops in systems containing Cu(II) complexes, the main factors responsible of the type of conductivity are the nature of hgand and the pH of solution. Single crystals or polycrystalline compact forms of CujO are known to be /)-type semiconductors with a band gap of 2.1 eV. However, common / -type 

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BudienA J., Kalinauskas, P, and Survila, A. (2006) Photoelectrochemical properties of oxide layers developed on copper... 

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